Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.

We explore how to configure an argon atmospheric-pressure plasma jet for enhancing its production of hydrogen peroxide (H2O2) in deionised water (DIW). The plasma jet consists of a quartz tube of 1.5 mm inner diameter and 3 mm outer diameter, with an upstream internal needle electrode (within the tube) and a downstream external cylindrical electrode (surrounding the tube). The plasma is operated by purging argon through the glass tube and applying a sinusoidal AC voltage to the internal needle electrode at 10 kV (peak–peak) with a frequency of 23.5 kHz. We study how the following operational parameters influence the production rate of H2O2 in water: tube length, inter-electrode separation distance, distance of the ground electrode from the tube orifice, distance between tube orifice and the DIW, argon flow rate and treatment time. By examining the electrical and optical properties of the plasma jet, we determine how the above operational parameters influence the major plasma processes that promote H2O2 generation through electron-induced dissociation reactions and UV photolysis within the plasma core and in the plasma afterglow; but with a caveat being that these processes are highly dependent on the water vapour content from the argon gas supply and ambient environment. We then demonstrate how the synergistic action between H2O2 and other plasma generated molecules at a plasma induced low pH in the DIW is highly effective at decontaminating common wound pathogens Gram-positive Staphylococus aureus and Gram-negative Pseudomonas aeruginosa. The information presented in this study is relevant in the design of medical plasma devices where production of plasma reactive species such as H2O2 at physiologically useful concentrations is needed to help realise the full clinical potential of the technology.

SummaryFluidity is essential for many biological membrane functions. The basis for understanding membrane structure remains the classic Singer-Nicolson model, in which proteins are embedded within a fluid lipid bilayer and able to diffuse laterally within a sea of lipid. Here we report lipid and protein diffusion in the plasma membrane of live cells of the bacterium Escherichia coli, using Fluorescence Recovery after Photobleaching (FRAP) and Total Internal Reflection Fluorescence (TIRF) microscopy to measure lateral diffusion coefficients. Lipid and protein mobility within the membrane were probed by visualizing an artificial fluorescent lipid and a simple model membrane protein consisting of a single membrane-spanning alpha-helix with a Green Fluorescent Protein (GFP) tag on the cytoplasmic side. The effective viscosity of the lipid bilayer is strongly temperature-dependent, as indicated by changes in the lipid diffusion coefficient. Surprisingly, the mobility of the model protein was unaffected by changes in the effective viscosity of the bulk lipid, and TIRF microscopy indicates that it clusters in segregated, mobile domains. We suggest that this segregation profoundly influences the physical behaviour of the protein in the membrane, with strong implications for bacterial membrane function and bacterial physiology.

Managing thermal transport in nanostructures became a major challenge in development of active microelectronic, optoelectronic and thermoelectric devices, stalling the famous Moore’s law of clock speed increase of microprocessors for...

We demonstrate the self‐catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non‐tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nano‐wires are defined by the indium droplets. This technique unravels a controllable, cost‐effective and time‐efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Advances in materials design and device miniaturization lead to physical properties that may significantly differ from the bulk ones. In particular, thermal transport is strongly affected when the device dimensions approach the mean free path of heat carriers. Scanning Thermal Microscopy (SThM) is arguably the best approach for probing nanoscale thermal properties with few tens of nm lateral resolution. Typical SThM probes based on a microfabricated Pd resistive probes (PdRP) using a spatially distributed heater and a nanoscale tip in contact with the sample, provide high sensitivity and operation in ambient, vacuum and liquid environments. Whereas some aspects of the response of this sensor has been studied, both for static and dynamic measurements, here we build an analytical model of the PdRP sensor taking into account finite dimensions of the heater that improves the precision and stability of the quantitative measurements. In particular we analyse the probe response for heat flowing through a tip to the sample and due to probe self-heating and theoretically and experimentally demonstrate that they can differ by more than 50%, hence introducing significant correction in the SThM measurements. Furthermore, we analyzed the effect of environmental parameters such as sample and microscope stage temperatures, and laser illumination, allowed to reduce the experimental scatter by a factor of 10. Finally, varying these parameters, we measured absolute values of heat resistances and compared these to the model for both ambient and vacuum SThM operation, providing a comprehensive pathway improving the precision of the nanothermal measurements in SThM.

A novel method of sample cross sectioning, beam-exit Ar-ion cross-sectional polishing, has been combined with scanning probe microscopy to study thin AlxGa1-xAs/GaAs layers. Additional contrast enhancement via a citric acid/hydrogen peroxide etch allows us to report the observation of layers as thin as 1 nm. Layer thickness measurements agree with transmission electron microscopy (TEM) data to 0.1 ± 0.2 nm, making this a very promising low-cost method for nanoscale analysis of semiconductor heterostructures.

The ability to uniquely identify an object or device is important for authentication [1]. Imperfections, locked into structures during fabrication, can be used to provide a fingerprint that is challenging to reproduce. In this paper, we propose a simple optical technique to read unique information from nanometer-scale defects in 2D materials. Imperfections created during crystal growth or fabrication lead to spatial variations in the bandgap of 2D materials that can be characterized through photoluminescence measurements. We show a simple setup involving an angleadjustable transmission filter, simple optics and a CCD camera can capture spatiallydependent photoluminescence to produce complex maps of unique information from 2D monolayers. Atomic force microscopy is used to verify the origin of the optical signature measured, demonstrating that it results from nanometer-scale imperfections. This solution to optical identification with 2D materials could be employed as a robust security measure to prevent counterfeiting.