Dielectric capacitors can store and release electric energy at ultrafast rates and are extensively studied for applications in electronics and electric power systems. Among various candidates, thin films based on relaxor ferroelectrics, a special kind of ferroelectric with nanometer-sized domains, have attracted special attention because of their high energy densities and efficiencies. We show that high-energy ion bombardment improves the energy storage performance of relaxor ferroelectric thin films. Intrinsic point defects created by ion bombardment reduce leakage, delay low-field polarization saturation, enhance high-field polarizability, and improve breakdown strength. We demonstrate energy storage densities as high as ~133 joules per cubic centimeter with efficiencies exceeding 75%. Deterministic control of defects by means of postsynthesis processing methods such as ion bombardment can be used to overcome the trade-off between high polarizability and breakdown strength.

Integrating the diverse functionalities of complex oxides into semiconductor [1-7] and flexible [8-12] electronics is a major technological challenge that has motivated extensive work. But despite considerable effort, the structural, chemical, and thermal mismatches between such substrates and complex-oxide materials often yield films with considerably worse crystal quality than that attained on single-crystal perovskite substrates. Alternative strategies for hetero-integration via substrate release and transfer, mimicking the fabrication processes of van-der-Waals heterostructures, [13-15] are just now beginning to yield single-crystal oxide films on arbitrary substrates, [16-21] thus circumventing the constraints of epitaxial growth. Moreover, these detached films no longer experience mechanical constraint from the substrate, giving more flexibility in structural manipulation and heterostructure assembly. Strain control over the lattice structure is particularly impactful in ferroelectrics where the polarization is directly connected to structural distortions. [22,23] In thin films, strain can define the optimal operating temperature regime [24-26] or domain configuration [27-29] that will boost electro-mechanical or thermal functionalities, Strain engineering in perovskite oxides provides for dramatic control over material structure, phase, and properties, but is restricted by the discrete strain states produced by available high-quality substrates. Here, using the ferroelectric BaTiO 3 , production of precisely strain-engineered, substratereleased nanoscale membranes is demonstrated via an epitaxial lift-off process that allows the high crystalline quality of films grown on substrates to be replicated. In turn, fine structural tuning is achieved using interlayer stress in symmetric trilayer oxide-metal/ferroelectric/oxide-metal structures fabricated from the released membranes. In devices integrated on silicon, the interlayer stress provides deterministic control of ordering temperature (from 75 to 425 °C) and releasing the substrate clamping is shown to dramatically impact ferroelectric switching and domain dynamics (including reducing coercive fields to <10 kV cm −1 and improving switching times to <5 ns for a 20 µm diameter capacitor in a 100-nm-thick film). In devices integrated on flexible polymers, enhanced room-temperature dielectric permittivity with large mechanical tunability (a 90% change upon ±0.1% strain application) is demonstrated. This approach paves the way toward the fabrication of ultrafast CMOS-compatible ferroelectric memories and ultrasensitive flexible nanosensor devices, and it may also be leveraged for the stabilization of novel phases and functionalities not achievable via direct epitaxial growth. Perovskite ABO 3 oxides can display an immense number of phases and functions by merely changing the A-and B-site cations. Even within a single chemistry, multiple phases can be in competition, and their stability can be tuned statically by fixing The ORCID identification number(s) for the ...

Using pulsed ferroelectric measurements, we probe switching dynamics in multiferroic BiFeO 3 , revealing low-ns switching times and a clear pathway to sub-ns switching. Our data is well described by a nucleation and growth model, which accounts for the various timescales in the switching process, namely (1) the ferroelectric polarization switching (bound-charge) dynamics and (2) the RC-limited movement of free charge in the circuit. Our model shows good agreement with observed data and begins to bridge the gap between experiment and theory, indicating pathways to study ferroelectric switching on intrinsic timescales.

No abstract

Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10’s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.