X-ray Pendellösung fringes from three silicon single crystals measured at 900 °C are analyzed with respect to density and size of oxygen precipitates within a diffusion-driven growth model and compared with TEM investigations. It appears that boron doped (p+) material shows a higher precipitate density and a higher strain than moderately (p-) boron crystals. In-situ diffraction reveals a diffusion-driven precipitate growth followed by a second growth regime in both materials. An interpretation of the second growth regime in terms of Ostwald ripening yields surface energy values (around 70 erg/cm2) similar to published data. Further, an increased nucleation rate by a factor of ∼13 is found in the p+ sample as compared to a p- sample at a nucleation temperature of 450 °C.
Diffusion of the vacancy defect leading to the formation of multi-shell structures in the nanowire and nanobridge J. Appl. Phys. 112, 114301 (2012) Characterization of defect evolution in ultrathin SiO2 layers under applied electrical stress J. Appl. Phys. 112, 103513 (2012) Fluid like behavior of oxygen in cubic zirconia under extreme conditions Appl. Phys. Lett. 101, 181906 (2012) Out-diffusion of deep donors in nitrogen-doped silicon and the diffusivity of vacancies J. Appl. Phys. 112, 013519 (2012) Additional information on J. Appl. Phys. Thickness dependent Pendell€ osung oscillations are highly sensitive to strain fields from defects in a host crystal. Based on this, we present a novel technique to measure the precipitation kinetics of oxygen in silicon already at its early stage of clustering at high temperatures. At 900 C, precipitates with a radius smaller than 4 nm and with a density of 1 6 0:5 Â 10 13 1/cm 3 were observed. The technique was calibrated by complementary scanning transmission electron microscope and energy dispersive X-ray measurements in the range of normal diffusivity yielding a diffusion constant of 1:7 6 0:1 Â 10 À12 cm 2 =s, which is close to the literature value of 2:074 Â 10 À12 cm 2 =s. The measurements have been made with the characteristic K a1 -line of a high voltage tungsten X-ray tube at 59.31 keV, which provides the opportunity to illuminate through complex sample environments like high temperature scattering furnaces. V C 2013 American Institute of Physics. [http://dx
The thickness dependence of the integrated Bragg intensities for Czochralski-grown silicon was measured with the characteristic tungsten Kα1-line at 59.3 keV. In contrast to previous experiments the sample is wedge shaped, which allows to take data over a wide range of Pendellösung fringes in one exposure only and without any mechanical movement of the sample. The period length, the oscillation amplitude, and the mean value of the Bragg intensity can be explored to identify the presence of point defects, and the temperature dependence of the period length allows to quantify the thermal Debye-coefficient with high precision.
The measurement of Pendellösungs oscillations was used to observe the time dependent nucleation of oxygen in a Czochralski grown single crystal at 750 °C. It is shown, that the theoretical approach of the statistical dynamical theory describes the data well. Within the framework of this theory it is possible to determine the static Debye-Waller-factor as a function of the annealing time by evaluating the mean value of the Bragg intensity and the period length. The temperature influence on the Pendellösungs distance was corrected for by measurement of a Float-zone sample at the same temperature.
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