Oxygen diffusivity in silicon derived from dynamical X-ray diffraction

Abstract

Diffusion of the vacancy defect leading to the formation of multi-shell structures in the nanowire and nanobridge J. Appl. Phys. 112, 114301 (2012) Characterization of defect evolution in ultrathin SiO2 layers under applied electrical stress J. Appl. Phys. 112, 103513 (2012) Fluid like behavior of oxygen in cubic zirconia under extreme conditions Appl. Phys. Lett. 101, 181906 (2012) Out-diffusion of deep donors in nitrogen-doped silicon and the diffusivity of vacancies J. Appl. Phys. 112, 013519 (2012) Additional information on J. Appl. Phys. Thickness dependent Pendell€ osung oscillations are highly sensitive to strain fields from defects in a host crystal. Based on this, we present a novel technique to measure the precipitation kinetics of oxygen in silicon already at its early stage of clustering at high temperatures. At 900 C, precipitates with a radius smaller than 4 nm and with a density of 1 6 0:5 Â 10 13 1/cm 3 were observed. The technique was calibrated by complementary scanning transmission electron microscope and energy dispersive X-ray measurements in the range of normal diffusivity yielding a diffusion constant of 1:7 6 0:1 Â 10 À12 cm 2 =s, which is close to the literature value of 2:074 Â 10 À12 cm 2 =s. The measurements have been made with the characteristic K a1 -line of a high voltage tungsten X-ray tube at 59.31 keV, which provides the opportunity to illuminate through complex sample environments like high temperature scattering furnaces. V C 2013 American Institute of Physics. [http://dx

Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

“…The BF and DF images taken under two beam condition for (004) show pronounced strain contrast making it difficult to unambiguously determine the shape of the precipitate. In contrast, the images taken under two beam condition for (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) clearly reveal that the precipitate has a plate-like character and lies on the (001) plane. From the smallest width of the contrast, the thickness of the precipitates can be roughly estimated.…”

“…The results for specimen III have already been presented in a previous publication. 6 For this specimen, a comparison of the X-ray and TEM data shows that the densities are remarkably close to each other. Additionally, the volume per precipitate differs only within 8% (see Table V).…”

“…Specimen III was already used in a previous study, 6 where the details of the TEM analysis are described.…”

“…Specimen III was already used in a previous experiment. 6 The growth temperature at 900 C was chosen for two reasons. First, the O diffusion constant D is well known to be 1.7 Â 10 À12 cm 2 /s (Ref.…”

“…Related to this functionality, it is crucial to have control over the density, size, and morphology of the precipitates. Diffraction techniques 2,3 and in particular dynamical X-ray diffraction expressed by Pendell€ osung fringes [4][5][6] are highly sensitive to the volume misfit between the precipitated phase and the host lattice, which is the origin of the strain fields. As an additional benefit, these techniques are capable of in-situ experiments at high temperature, which allows the monitoring of the entire precipitation kinetics.…”