No abstract

No abstract

No abstract

Domain configuration in epitaxial antiferroelectric films has been studied by X-ray nanoscopy, with the extraction of information about the domain sizes beyond the beam-size limit. The objective of this article is to understand how film thickness (the cases of 50 and 1000 nm are explored) and temperature (20 and 200°C) affect the nanodomain configuration of PbZrO3/SrRuO3/SrTiO3 thin films. It is found that the majority of antiferroelectric domains in both films are too small to be directly mappable, because many of them are simultaneously illuminated by the nanobeam (60 × 100 nm) most of the time. Nevertheless, these small sizes can be studied by analysing the diffraction peak width, which is, in the simplest approximation, inversely proportional to the domain size. With this approach it is identified that the characteristic (most probable) domain size does not depend on the film thickness and is ∼13 nm, while the scarcer larger domains do depend on it. An increase of the temperature to 200°C (just below the nominal antiferroelectric-to-cubic transition temperature) results in a slight increase in the characteristic size. These results are compared with those in ferroelectric films, where domain sizes are pronouncedly thickness dependent, and the relevant methodological question on the possibility of neglecting the interference of X-ray waves scattered by different nanodomains in the nanodomain assembly is also discussed.

Temperature evolution of dielectric response, atomic structure, and lattice dynamics in thin film of sodium niobate in the epitaxial NaNbO3/SrRuO3/(001)MgO heterostructure is studied by dielectric measurements, x-ray diffraction, and Raman spectroscopy. It is found that at room temperature NaNbO3 is in ferroelectric state, whereas the temperature-dependent dielectric constant experiences a broad maximum at 440 K on cooling and at 500 K on heating and reveals a diffuse phase transition. Reciprocal space mapping shows the presence of both anti-phase and in-phase tilting of oxygen octahedra. The temperature dependence of the M-point reflections suggests reorientation of the in-phase octahedra tilting axis from being parallel to the substrate at room temperature to perpendicular orientation at high temperatures. The temperature evolution of the shape of the Raman spectra reveal the decrease of the number of constituting peaks on heating. These results are interpreted as indicating a temperature-driven transition between two different orientations of the bulk ferroelectric Q phase with respect to the interface, namely between the state with electric polarization pointing at ≈ 45 • to the normal at room temperature to the state with polarization parallel to the interface above the transition. Transitions of this kind can be anticipated from theoretical considerations, while the experimental evidences of such are yet scarce.

No abstract