The inverted resistance method was used in this study to extend the bulk resistivity ofSmB6to a regime where the surface conduction overwhelms the bulk. Remarkably, regardless of the large off-stoichiometric growth conditions (inducing disorder by samarium vacancies, boron interstitials, etc.), the bulk resistivity shows an intrinsic thermally activated behavior that changes ∼7–10 orders of magnitude, suggesting thatSmB6is an ideal insulator that is immune to disorder.
After the theoretical prediction that SmB6 is a topological Kondo insulator, there has been an explosion of studies on the SmB6 surface. However, there is not yet an agreement on even the most basic quantities such as the surface carrier density and mobility. In this paper, we carefully revisit Corbino disk magnetotransport studies to find those surface transport parameters. We first show that subsurface cracks exist in the SmB6 crystals, arising both from surface preparation and during the crystal growth. We provide evidence that these hidden subsurface cracks are additional conduction channels, and the large disagreement between earlier surface SmB6 studies may originate from previous interpretations not taking this extra conduction path into account. We provide an update of a more reliable magnetotransport data than the previous one (Phys. Rev. B 92, 115110) and find that the orders-of-magnitude large disagreements in carrier density and mobility come from the surface preparation and the transport geometry rather than the intrinsic sample quality. From this magnetotransport study, we find an updated estimate of the carrier density and mobility of 2.71×10 13 (1/cm 2 ) and 104.5 (cm 2 /V·sec), respectively. We compare our results with other studies of the SmB6 surface. By this comparison, we provide insight into the disagreements and agreements of the previously reported angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and magnetotorque quantum oscillations measurements.
We present a new model to explain the difference between the transport and spectroscopy gaps in samarium hexaboride (SmB6), which has been a mystery for some time. We propose that SmB6 can be modeled as an intrinsic semiconductor with an accumulation length that diverges at cryogenic temperatures. In this model, we find a self-consistent solution to Poisson's equation in the bulk, with boundary conditions based on Fermi energy pinning due to surface charges. The solution yields band bending in the bulk; this explains the difference between the two gaps because spectroscopic methods measure the gap near the surface, while transport measures the average over the bulk. We also connect the model to transport parameters, including the Hall coefficient and thermopower, using semiclassical transport theory. The divergence of the accumulation length additionally explains the 10-12 K feature in data for these parameters, demonstrating a crossover from bulk dominated transport above this temperature to surface-dominated transport below this temperature. We find good agreement between our model and a collection of transport data from 4-40 K. This model can also be generalized to materials with similar band structure.
The use of music-vigils in palliative care should be investigated more extensively as our study supports that this intervention has benefits, almost no risk, minimal cost, and may improve patient-family experience of the dying process.
We investigate the roles of disorder on low-temperature transport in SmB 6 crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arise from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent residual bulk conduction, in contrast to smaller amounts of residual bulk conduction previously observed in Al flux grown samples with Sm vacancies. We consider hopping in an activated impurity band as a possible source for the observed bulk conduction, but it is unlikely that the large residual bulk conduction seen in floating zone samples is solely due to Sm vacancies. We therefore propose that one-dimensional defects, or dislocations, contribute as well. Using chemical etching, we find evidence for dislocations in both flux and floating zone samples, with higher dislocation density in floating zone samples than in Al flux grown samples. In addition to the possibility of transport through one-dimensional dislocations, we also discuss our results in the context of recent theoretical models of SmB 6 .
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.