This paper focuses on radiation-induced dose and single event effects in digital CMOS image sensors using pinned photodiodes. Proton irradiations were used to study cumulative effects. As previously observed, the dark current is the main electrical parameter affected by protons. The mean dark current increase appears proportional to Srour's universal damage factor. Therefore, the degradation is mainly attributed to displacement damage in the pinned photodiode. Heavy ion tests are also reported in this work. This study focuses on single event effects in digital CMOS imagers using numerous electronic functions such as column ADCs, a state machine and registers. Single event transients, upsets and latchups are observed and analyzed. The cross sections of these single events are transposed to specific space imaging missions in order to show that the digital functions can fit the mission requirements despite these perturbations.
Index Terms-Active pixel sensor (APS), CMOS image sensor (CIS), displacement damage () dose , monolithic active pixel sensor (MAPS), pinned photodiode (PPD), random telegraph signal (RTS), single event effects (SET), total ionizing dose (TID).
This paper describes the activities managed by CNES (French National Space Agency) for the development of focal planes for next generation of optical high resolution Earth observation satellites, in low sun-synchronous orbit. CNES has launched a new programme named OTOS, to increase the level of readiness (TRL) of several key technologies for high resolution Earth observation satellites. The OTOS programme includes several actions in the field of detection and focal planes: a new generation of CCD and CMOS image sensors, updated analog front-end electronics and analog-to-digital converters. The main features that must be achieved on focal planes for high resolution Earth Observation, are: readout speed, signal to noise ratio at low light level, anti-blooming efficiency, geometric stability, MTF and line of sight stability. The next steps targeted are presented in comparison to the in-flight measured performance of the PLEIADES satellites launched in 2011 and 2012. The high resolution panchromatic channel is still based upon Backside illuminated (BSI) CCDs operated in Time Delay Integration (TDI). For the multispectral channel, the main evolution consists in moving to TDI mode and the competition is open with the concurrent development of a CCD solution versus a CMOS solution. New CCDs will be based upon several process blocks under evaluation on the e2v 6 inches BSI wafer manufacturing line. The OTOS strategy for CMOS image sensors investigates on one hand custom TDI solutions within a similar approach to CCDs, and, on the other hand, investigates ways to take advantage of existing performance of off-the-shelf 2D arrays CMOS image sensors. We present the characterization results obtained from test vehicles designed for custom TDI operation on several CIS technologies and results obtained before and after radiation on snapshot 2D arrays from the CMOSIS CMV family.
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