For application in high-efficiency silicon solar cells bearing SiO x -based passivating contacts, we have developed 100 nm thick, PECVD Si-rich amorphous films, capable of being processed in industrial furnaces without blistering, by incorporating adequate amounts of each of C, N, and O in the films during PECVD. We found that non-blistering of the films is a result of the low intrinsic stress (compressive) in the films and not due to a low H content, which, in fact, is much higher in the non-blistering films than in the C-, N-, and O-free films. Among the three types of nonblistering Si-rich amorphous films, we conclude that the Oincorporated one is the most suitable for application in SiO x -based passivating contacts owing to the film's high excess Si content and ability to crystallize.
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