Homogeneous f iLms of titanium-doped aluminum and aluminum-l%siLicon were evaluated for possible application as interconnects in integrated circuits.Titanium concentration was systemnatically varied in the range of 0 to 1.2 wt.%. Electromigration behavior was studied for each film composition as a function of temperature. Significant differences were found between the binary and ternary alloys, corresponding to differences in the film microstructure.
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