The integration of
III–V materials on photonic integrated
circuits has enjoyed a lot of attention because of the necessity of
merging photon sources with silicon electronics. Nevertheless, III–V
source integration technologies are not sufficiently mature, inhibiting
the employment of such platforms to a broader range of applications.
Here, we present a novel approach that enables the transfer of III–V
nanolayers (≈250 nm) to silicates via oxide bonding. Through
use of a thick photoresist scaffold (≈30 μm), complete
removal of the substrate can be performed while preserving the relative
structure morphology. The use of the III–V native oxide without
depositing interfacial oxide layers greatly reduces the processing
time and cost. The transfer of an array composed of 1 mm long InGaP
waveguides with 250 nm thickness and widths spanning from 0.7 to 11.2
μm to a SiO2 substrate has been experimentally demonstrated,
evidencing the feasibility of the technique for wafer-scale processing.
The application of the nanolayered waveguides in the spontaneous-parametric
down-conversion process has been tested by photon-correlation measurement,
showing good agreement with the theoretical model.
We present a multifunctional structural coloration strategy for solar cell glass covers based on all-dielectric nanoscatterer arrays. Titanium dioxide (TiO2) nanostructures are designed to efficiently scatter in the visible and absorb in the UV region, making them suitable candidates as UV absorptive color coatings. Results from finite difference time domain (FDTD) simulations on a square lattice of TiO2 nanocylinders show that a rich palette in the reflected colors can be obtained by varying the period of the lattice. The reflected colors are narrow-banded, with a typical FWHM ~11–17 nm, leading to a minimal penalty on the amount of transmitted light. This narrow band reflectance is attributed to the interaction of Mie resonances between individual scatterers with their neighbors in the lattice. The color appearance, with viewing angles of ~45°, is maintained for incidence angles up to ~70°. With TiO2 being transparent for a major part of silicon solar cells spectral response (400–1100 nm), a loss of ~4.5–9.2% in the short-circuit current has been estimated in the specified wavelength range, primarily due to the loss of photons in the reflected light. Furthermore, due to the inherent UV-absorption properties of TiO2, the proposed color-cover designs reduce the transmittance of UV radiation (320–400 nm) by up to ~63.70%, potentially preventing the degradation of the encapsulation materials and thus increasing the lifetime expectancy of a solar panel.
Heterogeneous integration of 250 nm thick and 1 mm long InGaP waveguides on SiO2 via native oxide molecular bonding for counter-directional spontaneous photon-pair generation at 1550 nm and 1300 nm with 50 nm tunability is demonstrated.
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