Dual damascene Cu interconnects with Keff below 2.0 have been demonstrated for the first time. Air gaps between Cu lines were formed with a low K SiOC film in a carefully designed manner. CoWP cap layers were introduced to protect the Cu lines and to eliminate a dielectric liner layer. In addition, AGE (Air Gap Exclusion) was applied to solve crucial problems related to the air gaps. Keff of 1.9 was obtained at 65nm design rule, which surpassed by far ITRS target (2.5 2.8) for hp45. It was also confirmed that leakage current between lines was suppressed by the formation of the air gaps.
Fine powder of CaZrO3 (CZ) was synthesized by using ultra-fine and highly dispersed CaCO3 as a precursor. The results showed that the calcination temperature could be reduced to inhibit grain growth of CZ. Mean grain size of the CZ fine powder was 80 nm. Moreover, the CZ powder was used to synthesize a solid solution of (Ba,Ca)(Zr,Ti)O3 (BCZT) to examine the effect of the powder’s grain size on the reactivity of BT and CZ. It was found that the fine CZ powder enhanced the BT and CZ reaction.
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