Molecule-based
ferroelectrics has attracted much attention because
of its advantages, such as flexibility, light weight, and low environmental
load. In the present work, we examined an organic metal|insulator|semiconductor|insulator|metal
(MISIM) device structure to stabilize the interfacial polarization
in the S layer and to induce polarization hysteresis even without
bulk ferroelectrics. The MISIM devices with I = parylene C and S =
TMB (=3,3′,5,5′-tetramethylbenzidine)-TCNQ (=tetracyanoquinodimethane)
exhibited hysteresis loops in the polarization–voltage (P–V) curves not only at room temperature
but also over a wide temperature range down to 80 K. The presence
of polarization hysteresis for MISIM devices was theoretically confirmed
by an electrostatic model, which also explained the observed thickness
dependence of the I layers on the P–V curves. Polarization hysteresis curves were also obtained
in MISIM devices using typical organic semiconductors (ZnPc, C60, and TCNQ) as the S layer, demonstrating the versatility
of the interfacial polarization mechanism.
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