Rate-determining process in MISIM photocells for optoelectronic conversion using photo-induced pure polarization current without carrier transfer across interfaces

Tomimatsu, Akihiro; Yokokura, Seiya; Reissig, Louisa; Dalgleish, Simon; Matsushita, Michio M.; Awaga, Kunio

doi:10.1039/c9cp01221d

Cited by 3 publications

(3 citation statements)

References 27 publications

(29 reference statements)

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“…These results have proven our previous device model to be incomplete, as it was not able to describe the generation of an output voltage without a finite input voltage [11]. Sensors based on this, or a similar, design have also previously been referred to as photocells [12,13], transient photodetectors [14], and differential photodetectors [15]. The purpose of this report is to provide a robust, quantitative, and phenomenological description of RTFSs operating with no applied bias.…”

Section: Introductionmentioning

confidence: 94%

Operating principles of zero-bias retinomorphic sensors

Labram

2023

J. Phys. D: Appl. Phys.

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Zero bias retinomorphic sensors (ZBRSs) are a new type of optical sensor which produce a signal in response to changes in light intensity, but not to constant illumination. For this reason, they are hoped to enable much faster identification of moving objects than conventional sensing strategies. While recent proof-of-principle experimental demonstrations are significant, there does not yet exist a robust quantitative model for their behaviour, which represents an impediment for effective progress to be made in this field. Here I report a mathematical framework to quantify and predict the behaviour of ZRBSs. A simple device-level model and a more detailed carrier-dynamics model are derived. Both models are tested computationally, yielding equivalent behaviour consistent with experimental observations. A figure of merit, Λ_0, was identified which is hoped to enable facile comparison of devices between different research groups. This work is hoped to serve as the foundation for a consistent description of ZBRSs.

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Section: Introductionmentioning

confidence: 94%

Operating principles of zero-bias retinomorphic sensors

Labram

2023

J. Phys. D: Appl. Phys.

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“…When the field is reduced to zero, this type of polarization disappears due to charge recombination in most cases, but there are a few examples in which polarization is retained by some trapping mechanisms of the surface charges. , To stabilize the interfacial polarization, we propose the metal|insulator|semiconductor|insulator|metal (MISIM) structure (Figure ). In our previous works, we examined organic photocells with this MISIM structure, , which can effectively convert modulated light to polarization current (Figure S1). In MISIM photocells, the electrical polarization in the I layer enhances the photoinduced charge separation in the S layer and traps the photogenerated carriers at the I/S interfaces.…”

Section: Introductionmentioning

confidence: 99%

“…16,17 To stabilize the interfacial polarization, we propose the metal|insulator|semiconductor|insulator|metal (MISIM) structure (Figure 1). In our previous works, we examined organic photocells with this MISIM structure, 18,19 which can effectively convert modulated light to polarization current (Figure S1). In MISIM photocells, the electrical polarization in the I layer enhances the photoinduced charge separation in the S layer and traps the photogenerated carriers at the I/S interfaces.…”

Section: Introductionmentioning

confidence: 99%

Stabilization of Interfacial Polarization and Induction of Polarization Hysteresis in Organic MISIM Devices

Yokokura

Tomimatsu

Ishiguro

et al. 2021

ACS Appl. Mater. Interfaces

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Molecule-based ferroelectrics has attracted much attention because of its advantages, such as flexibility, light weight, and low environmental load. In the present work, we examined an organic metal|insulator|semiconductor|insulator|metal (MISIM) device structure to stabilize the interfacial polarization in the S layer and to induce polarization hysteresis even without bulk ferroelectrics. The MISIM devices with I = parylene C and S = TMB (=3,3′,5,5′-tetramethylbenzidine)-TCNQ (=tetracyanoquinodimethane) exhibited hysteresis loops in the polarization–voltage (P–V) curves not only at room temperature but also over a wide temperature range down to 80 K. The presence of polarization hysteresis for MISIM devices was theoretically confirmed by an electrostatic model, which also explained the observed thickness dependence of the I layers on the P–V curves. Polarization hysteresis curves were also obtained in MISIM devices using typical organic semiconductors (ZnPc, C60, and TCNQ) as the S layer, demonstrating the versatility of the interfacial polarization mechanism.

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