The unique mesoscopic perovskite film architecture of 2D microplatelets on top of 3D nanocrystals enable an energy cascade, yielding highly efficient light-emitting diodes.

24.04.15 KB. OK to add published OA paper to spira

The use of copper thiocyanate (CuSCN) as a universal solution‐processable and highly transparent hole‐transporting layer in organic bulk‐heterojunction photo­voltaic cells is demonstrated. When CuSCN is employed as a replacement for the commonly used poly(3,4‐ethyl­­enedioxythiophene):polystyrenesulfonate (PEDOT:PSS), organic solar cells with maximum power conversion efficiency of 8%, are realized; this value is 1.27 times higher than that for optimized control cells based on PEDOT:PSS.

Formamidinium lead halide (FAPbX3) has attracted greater attention and is more prominent recently in photovoltaic devices due to its broad absorption and higher thermal stability in comparison to more popular methylammonium lead halide MAPbX3. Herein, a simple and highly reproducible room temperature synthesis of device grade high quality formamidinium lead bromide CH(NH2)2PbBr3 (FAPbBr3) colloidal nanocrystals (NC) having high photoluminescence quantum efficiency (PLQE) of 55–65% is reported. In addition, we demonstrate high brightness perovskite light emitting device (Pe-LED) with these FAPbBr3 perovskite NC thin film using 2,2′,2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) commonly known as TPBi and 4,6-Bis(3,5-di(pyridin-3-yl)phenyl)-2-methylpyrimidine (B3PYMPM) as electron transport layers (ETL). The Pe-LED device with B3PYMPM as ETL has bright electroluminescence of up to 2714 cd/m2, while the Pe-LED device with TPBi as ETL has higher peak luminous efficiency of 6.4 cd/A and peak luminous power efficiency of 5.7 lm/W. To our knowledge this is the first report on high brightness light emitting device based on CH(NH2)2PbBr3 widely known as FAPbBr3 nanocrystals in literature.

Recently, CsPbBr perovskites have been emerging as very promising green emission materials for light-emitting diodes (LEDs) due to their high color purity, low cost and high photoluminescence quantum yield (PLQY). However, the corresponding LED performance is still low and far behind CHNHPbBr; it is due to the lack of proper perovskite film preparation methods and interfacial engineering. Herein, we report highly bright and durable CsPbBr-based LEDs fabricated using a one-step solution method. The precursor solution is prepared by simply dissolving CsPbBr powder and a CsBr additive in dimethyl sulfoxide (DMSO). We find that the CsBr additive not only significantly enhances the PLQY but also induces directional crystal growth into micro-plates, forming a smooth perovskite film for LEDs. LEDs employing such high quality films show a high luminance of 7276 cd m and high color purity with a full width at half maximum of 18 nm. Furthermore, the as-fabricated LEDs reveal an outstanding ambient stability with a decent luminance output (>100 cd m, steady increase without any degradation trend) for at least 15 h under a constant driving current density (66.7 mA cm). And we propose two reasons for this unique luminance increasing behavior: (1) the CsPbBr perovskite is thermally stable and can survive from joule heat; and (2) on the other hand, the joule heating will induce interface or crystalline film annealing, reduce device resistance and then enhance the luminance output.

A novel approach for alternating current (AC)‐driven organic light‐emitting devices is reported, which uses the concept of molecular doping in organic semiconductors. Doped organic charge‐transport layers are used to generate charge carriers within the device, hence eliminating the need for injecting charge carriers from external electrodes. Bright luminance of up to 1000 cd m−2 is observed when the device is driven with an AC bias. The luminance observed is attributed to charge‐carrier generation and recombination, leading to the formation of excitons within the device, without injection of charge carriers through external electrodes. A mechanism for internal charge‐carrier generation and the device operation is proposed.

We report the fabrication of high power conversion efficiency (PCE) polymer/fullerene bulk heterojunction (BHJ) photovoltaic cells using solution-processed Copper (I) Iodide (CuI) as hole transport layer (HTL). Our devices exhibit a PCE value of ∼5.5% which is equivalent to that obtained for control devices based on the commonly used conductive polymer poly(3,4-ethylenedioxythiophene): polystyrenesulfonate as HTL. Inverted cells with PCE >3% were also demonstrated using solution-processed metal oxide electron transport layers, with a CuI HTL evaporated on top of the BHJ. The high optical transparency and suitable energetics of CuI make it attractive for application in a range of inexpensive large-area optoelectronic devices.

We report the advantageous properties of the inorganic molecular semiconductor copper(I) thiocyanate (CuSCN) for use as a hole collection/transport layer (HTL) in organic photovoltaic (OPV) cells. CuSCN possesses desirable HTL energy levels [i.e., valence band at −5.35 eV, 0.35 eV deeper than poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS)], which produces a 17% increase in power conversion efficiency (PCE) relative to PEDOT:PSS-based devices. In addition, a two-fold increase in shunt resistance for the solar cells measured in dark conditions is achieved. Ultimately, CuSCN enables polymer:fullerene based OPV cells to achieve PCE > 8%. CuSCN continues to offer promise as a chemically stable and straightforward replacement for the commonly used PEDOT:PSS.