Enhanced light-matter interactions are the basis of surface-enhanced infrared absorption (SEIRA) spectroscopy, and conventionally rely on plasmonic materials and their capability to focus light to nanoscale spot sizes. Phonon polariton nanoresonators made of polar crystals could represent an interesting alternative, since they exhibit large quality factors, which go far beyond those of their plasmonic counterparts. The recent emergence of van der Waals crystals enables the fabrication of high-quality nanophotonic resonators based on phonon polaritons, as reported for the prototypical infrared-phononic material hexagonal boron nitride (h-BN). In this work we use, for the first time, phonon-polariton-resonant h-BN ribbons for SEIRA spectroscopy of small amounts of organic molecules in Fourier transform infrared spectroscopy. Strikingly, the interaction between phonon polaritons and molecular vibrations reaches experimentally the onset of the strong coupling regime, while numerical simulations predict that vibrational strong coupling can be fully achieved. Phonon polariton nanoresonators thus could become a viable platform for sensing, local control of chemical reactivity and infrared quantum cavity optics experiments.

We fabricated a C fullerene-based molecular spin-photovoltaic device that integrates a photovoltaic response with the spin transport across the molecular layer. The photovoltaic response can be modified under the application of a small magnetic field, with a magnetophotovoltage of up to 5% at room temperature. Device functionalities include a magnetic current inverter and the presence of diverging magnetocurrent at certain illumination levels that could be useful for sensing. Completely spin-polarized currents can be created by balancing the external partially spin-polarized injection with the photogenerated carriers.

Long distance spin transport and photoresponse are demonstrated in a single F16 CuPc spin valve. By introducing a low-temperature strategy for controlling the morphology of the organic layer during the fabrication of a molecular spin valve, a large spin-diffusion length up to 180 nm is achieved at room temperature. Magnetoresistive and photoresponsive signals are simultaneously observed even in an air atmosphere.

Energy barriers between the metal Fermi energy and the molecular levels of organic semiconductor devoted to charge transport play a fundamental role in the performance of organic electronic devices. Typically, techniques such as electron photoemission spectroscopy, Kelvin probe measurements, and in-device hot-electron spectroscopy have been applied to study these interfacial energy barriers. However, so far there has not been any direct method available for the determination of energy barriers at metal interfaces with n-type polymeric semiconductors. This study measures and compares metal/solution-processed electron-transporting polymer interface energy barriers by in-device hot-electron spectroscopy and ultraviolet photoemission spectroscopy. It not only demonstrates in-device hot-electron spectroscopy as a direct and reliable technique for these studies but also brings it closer to technological applications by working ex situ under ambient conditions. Moreover, this study determines that the contamination layer coming from air exposure does not play any significant role on the energy barrier alignment for charge transport. The theoretical model developed for this work confirms all the experimental observations.

The energetics of metal/molecular semiconductor interfaces plays a fundamental role in organic electronics, determining the performance of very diverse devices. So far, information about the energy level alignment has been most commonly gained by spectroscopy techniques that typically require experimental conditions far from the real device operation. Here we demonstrate that a simple three-terminal device allows the acquisition of spectroscopic information about the metal/molecule energy alignment in real operative condition. As a proof of principle, we employ the proposed device to measure the energy barrier height between different clean metals and C 60 molecules and we recover typical results from photoemission spectroscopy. The device is designed to inject a hot electron current directly into the molecular level devoted to charge transport, disentangling the contributions of both the interface and the bulk to the device total resistance, with important implications for spintronics and low-temperature physics.

Phonon‐polaritons, mixed excitations of light coupled to lattice vibrations (phonons), are emerging as a powerful platform for nanophotonic applications. This is because of their ability to concentrate light into extreme sub‐wavelength scales and because of their longer phonon lifetimes compared to their plasmonic counterparts. In this work, the infrared properties of phonon‐polaritonic nanoresonators made of monoisotopic 10B hexagonal boron nitride (h‐BN) are explored, a material with increased phonon‐polariton lifetimes compared to naturally abundant h‐BN due to reduced photon scattering from randomly distributed isotopes. An average relative improvement of 50% of the quality factor of monoisotopic h‐BN nanoresonators is obtained with respect to nanoresonators made of naturally abundant h‐BN, allowing for the sensing of nanometric‐thick films of molecules through both surface‐enhanced absorption spectroscopy and refractive index sensing. Further, even strong coupling between molecular vibrations and the phonon‐polariton resonance in monoisotopic h‐BN ribbons can be achieved.

Organic field-effect transistors (OFETs) are fundamental building blocks for plastic electronics such as organic photovoltaics or bendable displays with organic light emitting diodes, and radio-frequency identification (RFID) tags. A key part in the performance of OFET is the organic material constituting the channel. OFETs based on solution-processed polymers represent a new class of organic electronic devices. Recent developments in upscale solution-processed polymers have advanced towards high throughput, low-cost, and environmentally friendly materials for high-performance applications. Together with the integration of high performance materials, another enduring challenge in OFET development is the improvement and control of the injection of charge carriers. Graphene, a two-dimensional layer of covalently bonded carbon atoms, is steadily making progress into applications relying on van der Waals heterointerfaces with organic semiconductors. Here, we demonstrate the versatile operation of solution-processed organic transistors both in lateral and vertical geometries by exploiting the weak-screening effect and work function modulation properties of graphene electrodes. Our results demonstrate a general strategy for overcoming traditional noble metal electrodes and to integrate graphene with solution-processed Polyera ActiveInk™ N2200 polymer transistors for high-performance devices suitable for future plastic electronics.

A pyrene-fused phenazinothiadiazole that shows electron mobilities (μe = 0.016 cm(2) V(-1) s(-1)) two orders of magnitude higher than those reported for pyrene-fused pyrazaacenes is described.