Reflectarrays and tunable surfaces receive increasing attention for wavefront engineering in the upper millimeterwave range. As chip-based phase shifters can now be integrated with antenna elements, the performance verification at unit cell level is of great interest for a cost-efficient investigation of largescale arrays. In this paper, two unit cell designs with integrated phase shifter and on-chip antenna are evaluated experimentally at 240 GHz. For the first time, a single element is characterized above 100 GHz by applying the classic waveguide simulator technique. Since this method is mechanically problematic at high frequencies due to small dimensions and mechanical tolerances, an alternative approach involving a near-field probe is presented and investigated. The results for both measurement methods are compared and interpreted, assisted by full-wave simulations.
The gate resistance is a parasitic element in transistors for RF and millimeter-wave circuits that can negatively impact power gain and noise figure. To develop accurate device models, a reliable measurement methodology is crucial. This article reviews the standard measurement methodology used in the literature and proposes also an additional method, which is evaluated using suitable test structures in a 16 nm FinFET process. The advantages and disadvantages of the two approaches are discussed along with their respective application scenarios.
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