Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10K Appl. Phys. Lett. 103, 152103 (2013); 10.1063/1.4824875 Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors Appl. Phys. Lett. 97, 173506 (2010); 10.1063/1.3503971Influence of the contact metal on the performance of n -type carbonyl-functionalized quaterthiophene organic thin-film transistors

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Aluminum oxide (Al2O3) and hafnium oxide (HfO2) have been grown, using atomic layer deposition (ALD), as single and bi-layer gate dielectric films. Electrical and structural characterization indicates that the material properties depend on layer thickness and growth order, when deposited as bi-layers. Charge trapping at the interface between the bi-layer stacks results from the Maxwell-Wagner (MW) instability, which states a difference of conductivities at the dielectric-dielectric interface with respect to the bulk dielectric films. Hence a build-up of this interface charge compensates for the condition that the current densities of individual dielectric films match that of the overall stack. This causes electrical instabilities in stack behavior. Bottom-gate amorphous indium-gallium-zinc-oxide thin-film transistors are fabricated with these gate oxides, single and bi-layer stacks, with low VTH and gate leakage current to understand this instability. By empirically adopting ideal MOSFET equations and single gate dielectric film behavior as a reference, this MW instability in bilayer gate dielectric stacks has been accounted for in amorphous indium-gallium-zinc-oxide thin-film transistor transfer characteristics with a good fit in both above threshold and subthreshold regimes.

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