Effect of Individual and Bi-layer Stack Gate Dielectric on Device Performance for Amorphous Indium Gallium Zinc Oxide (a-IGZO) TFTs

Kiani, Ahmed; Pfaendler, Sieglinde M.-L.; Bayer, Bernhard C.; Hasko, D. G.; Milne, W. I.; Flewitt, Andrew J.

doi:10.1149/ma2012-01/22/936

Meet. Abstr.

2012

DOI: 10.1149/ma2012-01/22/936

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Effect of Individual and Bi-layer Stack Gate Dielectric on Device Performance for Amorphous Indium Gallium Zinc Oxide (a-IGZO) TFTs

Ahmed Kiani

Sieglinde M.-L. Pfaendler²,

Bernhard C. Bayer³

et al.

Abstract: not Available.

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Effect of Individual and Bi-layer Stack Gate Dielectric on Device Performance for Amorphous Indium Gallium Zinc Oxide (a-IGZO) TFTs

Abstract: not Available.

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See others like this or search for similar articles

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