The perfomance of hematite and Ti-substituted hematite nanorods as photoanodes for solar water splitting was quantitavely evaluated from photoelectrochemical point of view. The nanostructure, morphology and chemical / electronic structure...

The past decade has seen the explosion of experimental results on nanowires grown by catalyzed mechanisms. However, few are known on their electronic properties especially the influence of surfaces and catalysts. We demonstrate by an optical method how a curious electron-hole thermodynamic phase can help to characterize volume and surface recombination rates of silicon nanowires (SiNWs). By studying the electron-hole liquid dynamics as a function of the spatial confinement, we directly measured these two key parameters. We measured a surface recombination velocity of passivated SiNWs of 20 cm s(-1), 100 times lower than previous values reported. Furthermore, the volume recombination rate of gold-catalyzed SiNWs is found to be similar to that of a high-quality three-dimensional silicon crystal; the influence of the catalyst is negligible. These results advance the knowledge of SiNW surface passivation and provide essential guidance to the development of efficient nanowire-based devices.

The HERMES beamline (High Efficiency and Resolution beamline dedicated to X-ray Microscopy and Electron Spectroscopy), built at Synchrotron SOLEIL (Saint-Auban, France), is dedicated to soft X-ray microscopy. The beamline combines two complementary microscopy methods: XPEEM (X-ray Photo Emitted Electron Microscopy) and STXM (Scanning Transmission X-ray Microscopy) with an aim to reach spatial resolution below 20 nm and to fully exploit the local spectroscopic capabilities of the two microscopes. The availability of the two methods within the same beamline enables the users to select the appropriate approach to study their specific case in terms of sample environment, spectroscopy methods, probing depth etc. In this paper a general description of the beamline and its design are presented. The performance and specifications of the beamline will be reviewed in detail. Moreover, the article is aiming to demonstrate how the beamline performances have been specifically optimized to fulfill the specific requirements of a soft X-ray microscopy beamline in terms of flux, resolution, beam size etc. Special attention has been dedicated to overcome some limiting and hindering problems that are usually encountered on soft X-ray beamlines such as carbon contamination, thermal stability and spectral purity.

The impressive progress in the performance of synchrotron radiation sources is nowadays driven by the so-called `ultimate storage ring' projects which promise an unprecedented improvement in brightness. Progress on the detector side has not always been at the same pace, especially as far as soft X-ray 2D detectors are concerned. While the most commonly used detectors are still based on microchannel plates or CCD technology, recent developments of CMOS (complementary metal oxide semiconductor)-type detectors will play an ever more important role as 2D detectors in the soft X-ray range. This paper describes the capabilities and performance of a camera equipped with a newly commercialized backside-illuminated scientific CMOS (sCMOS-BSI) sensor, integrated in a vacuum environment, for soft X-ray experiments at synchrotron sources. The 4 Mpixel sensor reaches a frame rate of up to 48 frames s−1 while matching the requirements for X-ray experiments in terms of high-intensity linearity (>98%), good spatial homogeneity (<1%), high charge capacity (up to 80 ke−), and low readout noise (down to 2 e− r.m.s.) and dark current (3 e− per second per pixel). Performance evaluations in the soft X-ray range have been carried out at the METROLOGIE beamline of the SOLEIL synchrotron. The quantum efficiency, spatial resolution (24 line-pairs mm−1), energy resolution (<100 eV) and radiation damage versus the X-ray dose (<600 Gy) have been measured in the energy range from 40 to 2000 eV. In order to illustrate the capabilities of this new sCMOS-BSI sensor, several experiments have been performed at the SEXTANTS and HERMES soft X-ray beamlines of the SOLEIL synchrotron: acquisition of a coherent diffraction pattern from a pinhole at 186 eV, a scattering experiment from a nanostructured Co/Cu multilayer at 767 eV and ptychographic imaging in transmission at 706 eV.

We study by time-resolved low temperature photoluminescence (PL) experiments of the electronic states of silicon nanowires (SiNWs) grown by gold catalyzed chemical vapor deposition and passivated by thermal SiO(2). The typical recombination line of free carriers in gold-catalyzed SiNWs (Au-SiNWs) is identified and studied by time-resolved experiments. We demonstrate that intrinsic Auger recombination governs the recombination dynamic of the dense e-h plasma generated inside the NW. In a few tens of nanoseconds after the pulsed excitation, the density of the initial electronic system rapidly decreases down to reach that of a stable electron-hole liquid phase. The comparison of the PL intensity decay time of Au-SiNWs with high crystalline quality and purity silicon layer allows us to conclude that the Au-SiNW electronic properties are highly comparable to those of bulk silicon crystal.