There is a quest for electronic biosensors operated in water for biomedical applications and environmental monitoring. Water is an aggressive medium for standard electronics materials and devices due to its strong polarizability and electrochemical activity. Thick dielectric encapsulation provides necessary stability while it damps the sensitivity of the device to sensing events occurring in the aqueous environment. Organic electronics provides materials that exhibit stable electronic conduction in direct contact with water combined with other desirable properties like mechanical softness, biocompatibility and processability onto flexible substrates. In this review, we introduce an emerging class of organic transistors, in which the current across the organic film is gated by the electric field of the Debye–Helmholtz layer. We discuss the device physics, the sensing mechanism and the relevant electrochemical processes. Applications of water-gated transistors range from the sensing of biologically relevant molecules like DNA, proteins or hormones to non-invasive recording and stimulation of electrical activity of neurons. Materials chemistry is crucial to control properties of electrically active films and to allow the introduction of specific chemical functionalities and receptors at sensing interfaces of the device

Pentacene ultra thin film transistors were exposed to water and operated with a conventional silicon/silicon oxide bottom gate and an electrolyte top gate controlled by a working electrode. The transistors are highly sensible (mu V) to the electrochemical potential of the aqueous electrolyte. We show that dual gate operation permits the measurement of the double layer capacitance, C-DL = 14.6 mu F/cm(2). The device exhibits a fast (4.6 ms) and stable response, without bias stress as opposed to conventional bottom gate operations, when controlled with the electrolyte gate. These features make the device a promising candidate for potentiometric transducers required for non-invasive electrophysiology

We demonstrate an electrolyte-gated hybrid nanoparticle/organic synapstor (synapse-transistor, termed EGOS) that exhibits short-term plasticity as biological synapses. The response of EGOS makes it suitable to be interfaced with neurons: short-term plasticity is observed at spike voltage as low as 50 mV (in a par with the amplitude of action potential in neurons) and with a typical response time in the range of tens milliseconds. Human neuroblastoma stem cells are adhered and differentiated into neurons on top of EGOS. We observe that the presence of the cells does not alter short-term plasticity of the device

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Probing nanoscale electrical properties of organic semiconducting materials at the interface with an electrolyte solution under externally applied voltages is key in the field of organic bioelectronics. It is demonstrated that the conductivity and interfacial capacitance of the active channel of an electrolyte‐gated organic field‐effect transistor (EGOFET) under operation can be probed at the nanoscale using scanning dielectric microscopy in force detection mode in liquid environment. Local electrostatic force versus gate voltage transfer characteristics are obtained on the device and correlated with the global current–voltage transfer characteristics of the EGOFET. Nanoscale maps of the conductivity of the semiconducting channel show the dependence of the channel conductivity on the gate voltage and its variation along the channel due to the space charge limited conduction. The maps reveal very small electrical heterogeneities, which correspond to local interfacial capacitance variations due to an ultrathin non‐uniform insulating layer resulting from a phase separation in the organic semiconducting blend. Present results offer insights into the transduction mechanism at the organic semiconductor/electrolyte interfaces at scales down to ≈100 nm, which can bring substantial optimization of organic electronic devices for bioelectronic applications such as electrical recording on excitable cells or label‐free biosensing.

Abstract.We report on an artificial synapse, an organic synapse-transistor (synapstor) working at 1 volt and with a typical response time in the range 100-200 ms. This device (also called NOMFET, Nanoparticle Organic Memory Field Effect Transistor) combines a memory and a transistor effect in a single device. We demonstrate that short-term plasticity (STP), a typical synaptic behavior, is observed when stimulating the device with input spikes of 1 volt. Both significant facilitating and depressing behaviors of this artificial synapse are observed with a relative amplitude of about 50% and a dynamic response < 200 ms. From a series of in-situ experiments, i.e. measuring the current-voltage characteristic curves in-situ and in real time, during the growth of the pentacene over a network of gold nanoparticles, we elucidate these results by analyzing the relationship between the organic film morphology and the transport properties. This synapstor works at a low energy of about 2 nJ/spike. We discuss the implications of these results for the development of neuro-inspired computing architectures and interfacing with biological neurons.

High performance, air stable and solution-processed small molecule 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C 8 -BTBT) based organic field-effect transistors (OFETs) with various electrode configurations were studied in detail. The contact resistance of OFET devices with Ag, Au, WO 3 /Ag, MoO 3 /Ag, WO 3 /Au, and MoO 3 /Au were compared. Reduced contact resistance and consequently improved performance were observed in OFET devices with oxide interlayers compared to the devices with bare metal electrodes. The best oxide/metal combination was determined. The possible mechanisms for enhanced electrical properties were explained by favorable morphological and electronic structure of organic/metal oxide/metal interfaces.

Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In2O3 thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by more than two orders of magnitude, but also leads to a threshold voltage reduction, as well as significantly enhances the mobility through facilitated charge injection from the electrode to the active layer. Such a mechanism has been elucidated through morphological and spectroscopic studies.