In this work, we prepared thin films of nickel sulfide by spray pyrolysis on substrates of the glass at temperature of 300°C. The solution used is a mixture of nickel acetate and thiourea as a source of nickel and sulfur respectively, acetic acid was used as a complexing agent, and then heated the resulting layers in an ordinary furnace at 300°C at different times of 1h, 2h and 3h to study the annealing time effect on the physical and chemical properties. The characterization methods used indicate remarkable changes in the structural, electrical, morphological and optical properties of NiS films under annealing time. The results obtained have shown that the prepared NiS films contain good crystallization, dense morphology, good stochiometric ratio and high conductivity, and these specifications make them a potential candidate as electrode material for application in super-capacitors.
Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique. Conditions of preparation have been optimized to get good quality. A set of aluminum (Al) doped ZnO (between 0 and 5 wt%) thin films were grown on glass substrate at 350 ı C. Nanocrystalline films with a hexagonal wurtzite structure show a strong (002) preferred orientation. The maximum value of grain size G D 32.05 nm is attained of Al doped ZnO film with 3 wt%. All the films have low absorbance in the visible region, thus the films are transparent in the visible region; the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%. The electrical conductivity of the films increased from 7.5 to 15.2 ( cm) 1 . So the best results are achieved in Al doped ZnO film with 3 wt%.
In this work, we have prepared new materials of the nickel sulfide thin films by using the spray pyrolysis technique for promising co-catalyst to improve the photocatalytic performance or superconductivity. The effect of deposition temperature (523, 573 and 623 K) on structural, optical and electrical properties was investigated. The XRD diffraction shows that the prepared nickel sulfide at 523, 573 and 623 K having an orthorhombic, hexagonal and hexagonal structure, which were Ni3S2, Ni17S18 and NiS2, respectively. The minimum value of crystallite size (45,9 nm) was measured of deposited film at 573K. The thin films prepared at 523 and 573 K have an average transmittance is about 20 %. The prepared Ni1S2 thin film at T=623 K has the lowest calculated optical band gap and Urbach energy. The Ni1S2 thin film also has the best calculated of the refractive index and the extinction coefficient. The FTIR spectrums of the nickel sulfide have various bands such as Ni-S, C-H, O-H, N–H and C-S. The maximum electrical conductivity is 4,29x105 (Ω.cm)−1 was obtained at 573K of the Ni17S18. The nickel sulfide thin films sprayed at 573K have good structural, optical and electrical properties.
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