Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique

Abstract

Transparent conductive Al doped ZnO thin films were deposited by ultrasonic spray technique. Conditions of preparation have been optimized to get good quality. A set of aluminum (Al) doped ZnO (between 0 and 5 wt%) thin films were grown on glass substrate at 350 ı C. Nanocrystalline films with a hexagonal wurtzite structure show a strong (002) preferred orientation. The maximum value of grain size G D 32.05 nm is attained of Al doped ZnO film with 3 wt%. All the films have low absorbance in the visible region, thus the films are transparent in the visible region; the band gap energy increased from 3.10 to 3.26 eV when Al concentration increased from 0 to 3 wt%. The electrical conductivity of the films increased from 7.5 to 15.2 ( cm) 1 . So the best results are achieved in Al doped ZnO film with 3 wt%.

Strontium ion concentration effects on structural and spectral properties of Li4Sr(BO3)3 glass

“…The direct band gap energy appeared wider due to the decrease in the transition tail width. This observation and the associated red shift effect is in agreement with other finding [32]. Moreover, the optical band gap energy and transparency are found to influence strongly by the SrO concentration changes.…”

Effect of optical gap energy on the Urbach energy in the undoped ZnO thin films

“…The films were deposited at a substrate temperature of 350 • C. The optical properties of undoped ZnO thin film such a band gap energy and the Urbach energy were obtained from our previous paper [21], and various papers [22][23][24][25][26][27][28][29][30]; they have studied the effect of substrate temperature and precursor molarity on the structural and the optical properties of undoped ZnO thin films, these results are shown in Table 1 In this study, we will show the evolution of the precursor molarity on the Urbach energy and band gap energy, we tried to establish correlations for each model proposed. In our calculations, the Urbach energy can be calculated from precursor molarity and band gap energy of undoped ZnO thin films; the ZnO exhibit a single crystals exhibit n-type semiconductor with a high crystallinity.…”

Substrate Temperature Effect on Optical property of ZnO Thin Films

“…ZnO thin films can be produced by several techniques such as reactive evaporation and thermal annealing [6], molecular beam epitaxy (MBE) [7], magnetron sputtered technique [8], pulsed laser deposition (PLD) [9], the low-temperature solution method [10], the sol-gel technique, chemical vapor deposition, electrochemical deposition [11] and spray pyrolysis [12], have been reported to prepare thin films of ZnO. Among these, we will focus more particularly in this paper on the ultrasonic spray technique that is a low cost method suitable for large-scale production, it has several advantages in producing nanocrystalline thin films, such as, relatively homogeneous composition, a simple and deposition on glass substrate because of the low substrate temperatures involved, easy control of film thickness and fine and porous microstructure [13].…”