MoTe2 layers are obtained by solid state reactions – induced by annealing – between the Mo and Te constituents in the form of thin films, sequentially deposited (Mo/Te/…/Mo). The films are investigated by X‐ray diffraction analysis, scanning and transmission electron microscopy (SEM, TEM), photoelectron spectroscopy (XPS), optical absorption, and electrical resistivity measurements. It is found that the films are nearly stoichiometric although there is Te deficiency. MoTe2 in hexagonal form is obtained by annealing for 24 h at 823 K. The films are well crystallized. The c‐axis of the crystallites is perpendicular to the plane of the glass substrate. The surface of the films is smooth and their optical properties are in good agreement with those of the single crystals. Electrical properties are discussed in terms of an Mo excess segregation at the grain boundary.
Regu le J8 juin J992, rdvisd le 8 septembre J992, acceptd le 8 octobre J992) R4sumd. Une m£thode d'obtention de couches minces textur£es de MoSe2 a >t> mise au point. Ces couches sent obtenues h partir de feuillets de MO et de Te successivement superpos£s, puis trait£es therrniquement en pr£sence de vapeur de Te et/ou Se. Les couches obtenues sent £tudi£es par spectroscopie de photo£lectrons (XPS), diffraction de rayons
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