No abstract

Metasurfaces offer a unique platform to precisely control optical wavefronts and enable the realization of flat lenses, or metalenses, which have the potential to substantially reduce the size and complexity of imaging systems and to realize new imaging modalities. However, it is a major challenge to create achromatic metalenses that produce a single focal length over a broad wavelength range because of the difficulty in simultaneously engineering phase profiles at distinct wavelengths on a single metasurface. For practical applications, there is a further challenge to create broadband achromatic metalenses that work in the transmission mode for incident light waves with any arbitrary polarization state. We developed a design methodology and created libraries of meta-units—building blocks of metasurfaces—with complex cross-sectional geometries to provide diverse phase dispersions (phase as a function of wavelength), which is crucial for creating broadband achromatic metalenses. We elucidated the fundamental limitations of achromatic metalens performance by deriving mathematical equations that govern the tradeoffs between phase dispersion and achievable lens parameters, including the lens diameter, numerical aperture (NA), and bandwidth of achromatic operation. We experimentally demonstrated several dielectric achromatic metalenses reaching the fundamental limitations. These metalenses work in the transmission mode with polarization-independent focusing efficiencies up to 50% and continuously provide a near-constant focal length over λ = 1200–1650 nm. These unprecedented properties represent a major advance compared to the state of the art and a major step toward practical implementations of metalenses.

Metasurfaces are optically thin metamaterials that promise complete control of the wavefront of light but are primarily used to control only the phase of light. Here, we present an approach, simple in concept and in practice, that uses meta-atoms with a varying degree of form birefringence and rotation angles to create high-efficiency dielectric metasurfaces that control both the optical amplitude and phase at one or two frequencies. This opens up applications in computer-generated holography, allowing faithful reproduction of both the phase and amplitude of a target holographic scene without the iterative algorithms required in phase-only holography. We demonstrate all-dielectric metasurface holograms with independent and complete control of the amplitude and phase at up to two optical frequencies simultaneously to generate two- and three-dimensional holographic objects. We show that phase-amplitude metasurfaces enable a few features not attainable in phase-only holography; these include creating artifact-free two-dimensional holographic images, encoding phase and amplitude profiles separately at the object plane, encoding intensity profiles at the metasurface and object planes separately, and controlling the surface textures of three-dimensional holographic objects.

Research on two-dimensional designer optical structures, or metasurfaces, has mainly focused on controlling the wavefronts of light propagating in free space. Here, we show that gradient metasurface structures consisting of phased arrays of plasmonic or dielectric nanoantennas can be used to control guided waves via strong optical scattering at subwavelength intervals. Based on this design principle, we experimentally demonstrate waveguide mode converters, polarization rotators and waveguide devices supporting asymmetric optical power transmission. We also demonstrate all-dielectric on-chip polarization rotators based on phased arrays of Mie resonators with negligible insertion losses. Our gradient metasurfaces can enable small-footprint, broadband and low-loss photonic integrated devices.

We measure the spectrum and efficiency of the infrared light emission from ambipolar carbon nanotube field-effect transistors. The width of the emission peak is strongly device-structure dependent. Long devices (∼50 µm) show narrow spectral peaks that we attribute to relaxed carrier recombination, while short devices (∼500 nm) show broad peaks due to hot carrier recombination. The hot carrier distribution is limited to energies below the energies of the optical/zone boundary phonons near 180 meV. The efficiency of the radiative recombination is between 10 -6 and 10 -7 photons/electron−hole pair, and the possible quenching mechanisms are discussed.