We present intrinsic tunneling spectroscopy measurements on small Bi2Sr2CaCu2O8+x mesas. The tunnel conductance curves show both sharp peaks at the superconducting gap voltage and broad humps representing the c-axis pseudogap. The superconducting gap vanishes at Tc, while the pseudogap exists both above and below Tc. Our observation implies that the superconducting and pseudogaps represent different coexisting phenomena.

We demonstrate a combination of micro four-point probe (M4PP) and non-contact terahertz time-domain spectroscopy (THz-TDS) measurements for centimeter scale quantitative mapping of the sheet conductance of large area chemical vapor deposited graphene films. Dual configuration M4PP measurements, demonstrated on graphene for the first time, provide valuable statistical insight into the influence of microscale defects on the conductance, while THz-TDS has potential as a fast, non-contact metrology method for mapping of the spatially averaged nanoscopic conductance on wafer-scale graphene with scan times of less than a minute for a 4-in. wafer. The combination of M4PP and THz-TDS conductance measurements, supported by micro Raman spectroscopy and optical imaging, reveals that the film is electrically continuous on the nanoscopic scale with microscopic defects likely originating from the transfer process, dominating the microscale conductance of the investigated graphene film.

Intrinsic tunneling spectroscopy in high magnetic field (H) is used for a direct test of superconducting features in the quasiparticle density of states of pure Bi2212 and intercalated HgBr2-Bi2212 high- T(c) superconductors. We were able to distinguish with great clarity two coexisting gaps: (i) the superconducting gap, which closes as H-->H(c2)(T), and (ii) the c-axis pseudogap, which does not change either with H or with T. Strikingly different H dependencies, together with previously observed different temperature dependencies of the two gaps, speak against a superconducting origin of the pseudogap.