Effects of gallium doping on properties of a -plane ZnO films on r -plane sapphire substrates by plasma-assisted molecular beam epitaxyTo study the effects of plasma chemistries on etch characteristics and plasma-induced damage to the optical properties, dry etching of ZnO films has been carried out using inductively coupled plasmas of Cl 2 /Ar, Cl 2 /H 2 /Ar, and CH 4 /H 2 /Ar. The CH 4 /H 2 /Ar chemistry showed a faster etch rate and a better surface morphology than the Cl 2 -based chemistries. Etched samples in all chemistries showed a substantial decrease in the PL intensity of band-edge luminescence mainly due to the plasma-induced damage. The CH 4 /H 2 /Ar chemistry showed the least degradation of the optical properties.
Fundamental aspects for a novel LSI pattern fabrication process employing polysilanes as an antireflective layer (ARL) are discussed. The multilayer is composed of an organic resist, a polysilane layer, and a substrate. The polysilane avoids reflections from the substrate when the resist is exposed to 248-nm light emitted from a KrF excimer laser. It also acts as a pattern transfer layer. The polysilane layer is etched faster than the resist when the etching is carried out with reactive ions by employing Cl 2 gas. Therefore, the resist pattern is transferred to the polysilane layer precisely. The relationship between the structure of the polysilane and its physical properties, namely, the UV absorbance at 248 nm and etching selectivity toward the organic resist, is discussed and the best polysilane structure for this application identified.
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