Application of Polysilanes to LSI Manufacturing ProcessesTheir Antireflective Properties and Etching Selectivity toward Resists

Abstract

Fundamental aspects for a novel LSI pattern fabrication process employing polysilanes as an antireflective layer (ARL) are discussed. The multilayer is composed of an organic resist, a polysilane layer, and a substrate. The polysilane avoids reflections from the substrate when the resist is exposed to 248-nm light emitted from a KrF excimer laser. It also acts as a pattern transfer layer. The polysilane layer is etched faster than the resist when the etching is carried out with reactive ions by employing Cl 2 gas. Therefore, the resist pattern is transferred to the polysilane layer precisely. The relationship between the structure of the polysilane and its physical properties, namely, the UV absorbance at 248 nm and etching selectivity toward the organic resist, is discussed and the best polysilane structure for this application identified.

Elucidation of the Thermochemical Properties of Triphenyl- or Tributyl-Substituted Si-, Ge-, and Sn-Centered Radicals by Means of Electrochemical Approaches and Computations

“…Chemical compounds containing Si, Ge, or Sn atoms have attracted considerable attention due to their potential in the development of new types of materials displaying excellent pattern transfer and photoconducting properties. , Recently, synthesis of polygermanes and polysilanes by electrochemical means has been reported, − making the knowledge of the redox potentials of the species involved essential for predicting and ultimately adjusting whether a radical or ionic pathway should be followed. In the literature, only few reports have been concerned with the estimation of the potentials of these types of radicals, even if a radical, such as Bu 3 Sn • , has found widespread applications in synthesis .…”

Patterning of functional materials in line with photosensitive template geometry

“…[21][22][23] Various applications have been investigated, such as photovoltaic cells, [24][25][26][27][28][29][30][31][32] electroluminescence 33) or an LSI fabrication process. 34,35) We believe our invention can contribute largely to these activities.…”

UV degradability of polysilanes for nanoresists examined by electron spectroscopies and photoluminescence

“…Silicon based optical lithography resists, as another very prospective application of OS, were reviewed in recent papers of Hayase [7][8]. He claims the polysilanes are highly suitable for Si technologies compared to carbon-based polymers as Si atoms contained in polysilanes are compatible with large-scale integration (LSI) manufacturing and are not recognized to be impurities.…”