Modern mathematical models for automatic analysis of electrical characteristics of integrated circuits are considered. The requirements for the analysis programs are formulated. A comparative analysis of machine methods for calculating integrated circuits is carried out in terms of their accuracy, RAM volumes and calculation time. The features of the development of modern automation tools for designing integrated circuits are considered. One of the main tasks of designing an integrated circuit is a schematic analysis, which must be carried out both at the preliminary stage and after the development of the integrated circuit topology. However, it is possible to identify the main re-quirements that a modern analysis program must meet: reliability - stable calculation of a wide class of electronic circuits, obtaining solutions even for poorly conditioned tasks; high performance - this requirement is especially important when calculating BIS, in tasks of multivariate analysis, such as statistical analysis, and optimization; low costs of machine memory and expansion of the maximum permissible complexity of the analyzed circuits; flexibility, the possibility of making changes to the program, in particular, the replacement of mathematical models of circuit components, the introduction of new models, the improvement of the computational algorithm, the inclusion of the pro-gram in more complex programs, etc.; the availability of convenient input and output of initial information.
The article is devoted to the analysis of the behavior of a mobile robot using finite state machine algorithms in order to find a way to the goal and avoid obstacles. After justifying the use of such methods, the analysis of a standard deterministic finite automaton is done. Further, the theory of Markov processes is applied to this algorithm, as a result of which the state machine becomes part of the hidden Markov model. This allows you to apply probabilistic methods to modeling the behavior of the robot. This probabilistic behavior is most promising in complex environments with unpredictable obstacle configurations. To compare the efficiency of deterministic and probabilistic finite state machine, we applied a genetic algorithm. In the numerical experiment that we conducted in the Scilab software, we considered two main types of environments in which a mobile robot can move - an office-type environment and a polygonal-type environment. For each type of environment, we alternately applied each of the indicated behavior algorithms. For the genetic algorithm, we used one hundred individuals who were trained over 1000 generations to find the most optimal path in the specified environments. As a result, it was found that the deterministic finite state machine algorithm is the most promising for movement in an office-type environment, and the probabilistic finite state machine algorithm gives the best result in a complex polygonal environment.
The article presents the method of evaluation and results of research Schottky diodes resistance for use in electronic equipment. Studies were carried out to determine the structural and technological reserves for durability. Also in the article the schemes of inclusion of Schottky diodes for measurement of direct reverse current and direct excitation of the diode applied at researches are considered.
The article is devoted to the analysis of RISC-processor blocks for fault tolerance, which was carried out on the example of the 1890vm2t processor. the paper describes the block diagram of this processor and the methodology for evaluating the fault tolerance of the multiplication-division module MDUnit. The evaluation of the failure tolerance and the dependences of the values share about the results and formulated requirements to architecture functional blocks.
The article deals with the problems of development and selection of materials based on the structures of KNS/CNI (silicon on insulator/ silicon on sapphire). The article describes the prospects of technology for designing and manufacturing chips based on ultra-thin silicon layers on a sapphire substrate (UTSi). The result of a comparative analysis of modern technologies for manufacturing KNI structures is presented.
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