Experimental investigations have been carried out into the annealing and transient effects in the characteristics of some commercially available GaAs-based Schottky and light emitting diodes (LEDs) along the line of the two roots model. The ideality factor m ( ∼ =1.3) in the Schottky diode is constant over the range of annealing temperatures (T a ) and over different waiting times (t). TSC measurements indicate the presence of five sets of traps at T a = 200 • C and T a = 250 • C. A change in T a leads to a change in the trap energy-levels.Furthermore appearance and disappearance of a hysteresis loop take place with annealing, giving rise to a change in the power (P ) involved within the loop.
Some experimental investigations have been carried out on GaAs‐based devices in connection with the existing two roots model. A new empirical relationship has been established which follows the experimental data for different semiconductor devices exactly. This has been explained in terms of the emission/capture of carriers by midgap traps, impurities etc. involved in the two roots model. It is experimentally established that appearance (and disappearance) of hysteresis in the I–V characteristics could take place in the same device at different temperatures. This phenomenon reemphasizes the importance of the model.
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