Numerical and Experimental Results for Gaas Diodes Confirming the Two Roots Model

Laser and Thermal Annealing Effects on the Optical Properties of n-GaAs [100] Crystals: Application to Its Schottky Diodes

“…The large values of m [17,18]. Figure 9 shows the electrical power P lost within hysteresis in the I ±V characteristics, relating to the two roots model [17,20]. The power shows the occurrence of a peak of 0.4 mW around T A 120 C which is close to that of the maximum in m in Fig.…”

Novel Extended Solids Composed of Transition Metal Oxide Clusters

“…Using iron(III) chloride in place of KMnO resulted into the formation of (18). The reaction of aqueous solution of lithium vanadate with hydrazinium sulfate results into a dark colored solution which reacts with nickel(II) sulfate hexahydrate and zinc(II) sulfate heptahydrate to yield dark greenish-black prism shaped crystals of Li…”

“…The guest +SO ,\ group, unlike the encapsulated +VO ,\ groups in 1 and 2, is not an integral part of the shell and has normal S}O distances (1.472 A > ). Figure 5 represents the isomorphous structures of the mixed-valence compounds 5+8 (15,18) Fig. 6.…”

Annealing and transient effects in some GaAs diodes

“…This leads to a hysteresis in the characteristics in the region where the ideality factor (m) is of the order of 2. The transition between the appearance of the hysteresis and its disappearance is predictable which was in fact depicted in a phase diagram in [15] and the model has been discussed in full detail in [15][16][17]. The usefulness of the model is however twofold:…”

“…E t represents a change in the trap-level that might occur during the annealing processes (see next section). These effects will be discussed on the line of the two roots model (TR model) [15][16][17]. The model will however be outlined here briefly.…”