The rate of solid-phase epitaxial regrowth of implantation amorphized 〈100〉 Si was studied in intrinsic, phosphorus-doped and compensated (boron- and phosphorus-doped) materials. The anneals were performed in flowing Ar gas in the temperature range from 477 to 576 °C, and the regrowth was analyzed by 2.2-MeV 4He+ channeling techniques. The intrinsic and compensated samples exhibited nearly equal growth rates with thermal-activation energies of 2.85 eV (intrinsic) and 2.8 eV (compensated). The growth rate in the 31P-doped (constant concentration of 1.7×1020 cm−3) was enhanced by a factor of 6 to 8, while little change in the activation energy was observed.
We have measured and analyzed the bias limitations of our 0. I-pm In ,,Ga,,As-channel MODFETs. A semi-analytical model allows us to correlate a major degradation mechanism, the increase in drain resistance [ l], to impact ionization in the narrow-bandgap channel. We find, as others have [2], that this mechanism also determines the on-state breakdown voltage BVos(od, and thus limits the operating regime. The modeling predicts the shape of BVD@) vs. ID and shows that the off-state breakdown voltage is irrelevant for practical load-lines. BVD.#~(ID) deviates markedly from a constant power locus. In fact, it tends to have a flat minimum B V~,y(~n.mm) (corresponding to maximum impact ionization current) near the ZD of maximum transconductance. B V D S ( O~J~ becomes the most significant measure of FET breakdown. Most of our device variations have tended to produce a constant-power trade-off of BVos(on2mln) with its associated ID, in contrast to the non-constant-power locus Of BVD#~)(ID). The model predicts both trends well.
By utilizing a novel ZEP/PMGI/ZEP trilayer resist process, GaInAs/AlInAs T-gate modulation-doped field effect transistors on InP with 0.1 μm gate lengths have been demonstrated. The trilayer resist requires only a single exposure. An overhang structure for liftoff, with a 0.1 μm footprint, is created by a sequence of infinitely selective developments for each layer. Linewidths as narrow as 65 nm have been obtained. Devices with a maximum current of 860 mA/mm, extrinsic transconductances of 658 mS/mm, and a current-gain-cutoff frequency ft of as high as 203 GHz have been fabricated. Yields as high as 96% and a threshold voltage uniformity of 34 mV (1 sigma) have been achieved on a 2 in. wafer.
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