For the first time we have demonstrated an approach to control transmission of light through a single nanohole with the use of photon crystal microcavity. By use of the approach 28-fold enhanced transmission of light through a single nanohole in Au film has been experimentally demonstrated. The approach has the following advantages: (1) it enables to considerably increase transmission of light through a single nanohole, (2) the increase in transmission is unaffected by the hole diameter, (3) the transmission of nanohole is selective in frequency, the width of the resonance ~λ/90, (4) no auxiliary structures are necessary on the surface of the Au film (extra nanoholes, grooves, etc.).
Atomic‐layer deposition (ALD) technique in combination with in vacuo X‐ray photoelectron spectroscopy (XPS) analysis has been successfully employed to obtain fully ALD‐grown planar TiN/HfO2/TiN metal–insulator–metal structures for resistive random access memory (ReRAM) memory elements. In vacuo XPS analysis of ALD‐grown TiN/HfO2/TiN stacks reveals the presence of the ultrathin oxidized layers consisting of TiON (∼0.5 nm) and TiO2 (∼0.6 nm) at the bottom TiN/HfO2 interface (i); the nonoxidized TiN at the top HfO2/TiN interface (ii); the oxygen deficiency in the HfO2 layer does not exceed the XPS detection limit (iii). Electroformed ALD TiN/HfO2/TiN stacks reveal both conventional bipolar and complementary types of resistive switching. In the complementary resistive switching regime, each programming sequence is terminated by a reset operation, leaving the TiN/HfO2/TiN stack in a high‐resistance state. The observed feature can avoid detrimental leaky paths during successive reading operation, which is useful in the passive ReRAM arrays without a selector element. The bipolar regime of resistive switching is found to reveal the gradual character of the SET and RESET switching processes. Long‐term potentiation and depression tests performed on ALD‐grown TiN/HfO2/TiN stacks indicate that they can be used as electronic synapse devices for the implementation of emerging neuromorphic computation systems.
In modern experimental physics the pinhole camera is used when the creation of a focusing element (lens) is difficult. We have experimentally realized a method of image construction in atom optics, based on the idea of an optical pinhole camera. With the use of an atom pinhole camera we have built an array of identical arbitrary-shaped atomic nanostructures with the minimum size of an individual nanostructure element down to 30 nm on an Si surface. The possibility of 30 nm lithography by means of atoms, molecules and clusters has been shown.
We experimentally demonstrate a drastic increase in the rate of radiative process of a nanoscale physical system with implementation of the three physical effects: (1) the size effect, (2) plasmon resonance and (3) the optical Tamm state. As an example of a nanoscale physical system, we choose a single nanohole in Au film when the nanohole is embedded in a photonic crystal of a specific type that maintains an optical Tamm state and as a radiative process - a nonlinear photoluminescence. The efficiency of the nonlinear photoluminescence is increased by more than 10(7) times in compare to a bulk material.
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