Transport properties of two-dimensional electron and hole gas at (0 0 1) GaAs=Al x Ga 1À x As heterointerface in [1 1 0] and [1 À 1 0] directions have been investigated for the first time under in plane uniaxial compression up to 5 kbar. Resistivity, Shubnikov-de Haas oscillations and Hall effect were measured and carrier densities and mobilities were determined. The in-plane uniaxial compression significantly modifies the energy spectrum of p-GaAs=Al x Ga 1À x As that leads to strong anisotropy of hole mobility under compression. In the case of the n-type heterostructure uniaxial compression causes only change of the carrier concentration and the corresponding small change of the initial mobility anisotropy, determined by anisotropic surface roughness scattering.Investigation of the influence of uniaxial compression on electronic properties of two dimensional (2D) electron and hole systems in (0 0 1) GaAs=Al x Ga 1À x As heterostructures seems to be very interesting both from fundamental and practical points of view. On the one hand their magnetotransport characteristics are determined by scattering processes, which are more or less common for the both types of the heterostructures. On the other hand the energy spectra of 2D holes and 2D electrons transform in different way under uniaxial compression due to the different symmetry of valance and conduction band states in GaAs=Al x Ga 1À x As.The n-(0 0 1) GaAs=Al 0.3 Ga 0.7 As and p-(0 0 1) GaAs=Al 0.5 Ga 0.5 As heterostructures were grown in Niels Bohr Institute of Copenhagen University by molecular beam epitaxy on (0 0 1) GaAs semi-insulating substrate and doped in active layer with Si or Be correspondingly. Samples of size 0.5 Â 0.8 Â 3.0 mm 3 , with their long axis parallel to one or the other of the two directions [1 1 0] and [1 À 1 0], were cleaved from the wafers along natural cleavage planes. Two identical, but mutually perpendicular, Hall-bar mesas were wet etched * Corresponding
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