Valence-band structure and transport properties of two-dimensional holes in p-type GaAs/Al 0.5 Ga 0.5 As asymmetric quantum wells under uniaxial compression have been investigated both theoretically and experimentally. The Luttinger-Kohn Hamiltonian with strain terms was self-consistently solved by using the finitedifference k•p method. The Fermi surface was found to become strongly anisotropic under the application of in-plane uniaxial compression, and the differences between the hole concentrations in the ground-state splitted subband and between the corresponding effective masses to decrease. The electrical resistance becomes strongly anisotropic under applied compression, decreasing in the direction parallel to the compression and increasing in the perpendicular direction. ͓S0163-1829͑99͒00408-7͔
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