Threshold voltage dependence on channel length of short channel MOSFETs is remodelled from simple one D‐approximation of 2D‐problem taking into considerartion the flat‐band voltage change in the short channel region. Effect of source/drain junction depths and back gate bias is also taken into account. It is shown that in the short channel region, flat‐band voltage increases with decrease in channel length and reaches to a limiting value of 2VFB. Threshold voltage variation with the channel length further reduces due to change in flat‐band voltage and results in performance unsuitable for logic designs.
perform for particles smaller than 0.1 p.m, i.e., for devices whose linewidth is below 0.35 p.m.
ConclusionsIn this report the physics of particle removal by a megasonic wave are investigated. A novel particle removal mechanism is analyzed, and the relevant quantities are evaluated. It is shown that the megasonic removal force scales as the cube of the particle diameter, and that megasonic cleaning technology cannot remove particles of 0.1 p.m and smaller. Therefore, megasonic cleaning is not a viable technology for manufacturing devices whose linewidth is below 0.35 p.m.
AcknowledgmentsThe comments made by the reviewers on an earlier draft of this paper are gratefully acknowledged. ABSTRACT Ultrashallow elevated nc/p junctions (-.75 nm) incorporating selectively deposited epitaxial silicon layers were fabricated. The undoped epi layers (--.100 nm) were deposited on exposed diffusion areas in an Advanced Semiconductor Material Epsilon I system specifically designed for low thermal budget single-wafer processing. Shallow junctions ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.170.49.187
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