The effect of the elevated source/drain doping profile on performance and reliability of deep submicron MOSFETs

Sun, Jay J.; Bartholomew, R. F.; Bellur, K. R.; Srivastava, A.; Osburn, C. M.; Masnari, N.A.

doi:10.1109/16.622606

Cited by 6 publications

(2 citation statements)

References 14 publications

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“…The SAC pad formation by SEG is a selfaligned process without additional lithographic steps, and the electrical resistance of the contact pads can be lower than that of poly-Si contact pads. [9][10][11][12] Moreover, the SEG layer at the contact pads can serve as a buffer to prevent dopants from diffusing into the substrate, resulting in shallow junction depth. [13][14][15][16] Therefore, the contact pad technology using Si SEG was proposed for the 64 megabit DRAM.…”

Section: Introductionmentioning

confidence: 99%

Isotropic/anisotropic growth behavior and faceting morphology of Si epitaxial layer selectively grown by cold wall ultrahigh vacuum chemical vapor deposition

Lim

Song

Yoon

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Si epitaxial layers were selectively grown on local oxidation of silicon patterned Si (100) substrates by the cold wall ultrahigh vacuum chemical vapor deposition under various growth conditions. The isotropic/anisotropic growth behavior and the faceting morphology of Si epitaxial layers were systematically investigated. As the growth temperature increased and the Si2H6 flow rate decreased, the lateral overgrowth of Si was reduced, and subsequently the anisotropic selective epitaxial growth (SEG) of Si was enhanced. Depending on growth conditions, the lateral overgrowth was not initiated until the layer thickness exceeded a critical value, and the degree of lateral overgrowth was changed with the layer thickness. These observations strongly imply that the mass transport and accumulation processes on facet surfaces play an important role in the SEG morphological change. Taking both surface mass transport and free energy change into account, a model is proposed to explain our experimental observations, and the detailed discussion is provided. Finally, we confirmed the proposed model through the experimental and theoretical analysis of the Si growth rate change on the (111) facet plane with facet length, which highlights the strong dependence of the mass transport and accumulation processes on the difference between facet length and surface diffusion length.

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Section: Introductionmentioning

confidence: 99%

Isotropic/anisotropic growth behavior and faceting morphology of Si epitaxial layer selectively grown by cold wall ultrahigh vacuum chemical vapor deposition

Lim

Song

Yoon

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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show abstract

“…The structural properties of the epitaxial Si films were characterized by synchrotron x-ray scattering and transmission electron microscopy. 6,7 Although typical crystal growth methods such as chemical vapor deposition or molecular beam epitaxy may be applied for this purpose, they are usually too expensive for industrial use or require undesirable high temperature processes. There were significant structural defects localized at the interface that distinguish the epilayer from the substrate.…”

mentioning

confidence: 99%

Epitaxial Si/Si(001) thin films obtained by solid phase crystallization

Kim

Jeon

et al. 2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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We found that hydrogenated amorphous Si/Si(001) thin films of thickness less than about 1000 Å crystallize into epitaxial silicon during solid phase crystallization. The epitaxial solidification is in contrast to the formation of polycrystalline silicon of thicker amorphous films. The structural properties of the epitaxial Si films were characterized by synchrotron x-ray scattering and transmission electron microscopy. The crystalline order in vertical direction is coherent throughout the film thickness, and the surface remains smooth. There were significant structural defects localized at the interface that distinguish the epilayer from the substrate.

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Low Schottky barrier source/drain for advanced MOS architecture: device design and material considerations

Dubois

Larrieu

2002

Solid-State Electronics

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The effect of the elevated source/drain doping profile on performance and reliability of deep submicron MOSFETs

Cited by 6 publications

References 14 publications

Isotropic/anisotropic growth behavior and faceting morphology of Si epitaxial layer selectively grown by cold wall ultrahigh vacuum chemical vapor deposition

Isotropic/anisotropic growth behavior and faceting morphology of Si epitaxial layer selectively grown by cold wall ultrahigh vacuum chemical vapor deposition

Epitaxial Si/Si(001) thin films obtained by solid phase crystallization

Low Schottky barrier source/drain for advanced MOS architecture: device design and material considerations

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