We present a detailed description and a first theoretical study of an improved concept for high-frequency self-pulsations (SPs) in multisection (MS)-DFB lasers with an integrated phase tuning section. The DFB wavelengths of the two DFB sections are spectrally detuned by nearly the stopband width using two gratings with different grating periods. If both DFB sections are operated at lasing conditions and an appropriate phase is chosen, we obtain beating-type SP with a frequency given by the spectral distance of two lasing modes. Good agreement between theory and experiment is obtained with respect to the role of the detuning, the role of the phase section, as well as the synchronization to external injected signals. The modeling shows a strong nonlinear coupling of the two involved modes via the carrier densities. This effect is important for the mutual coherence and for the observed locking of the beating oscillations to external signals. From the results of the calculations, we draw the conclusion that even higher SP frequencies can be obtained based on the new concept
We present our hybrid InP to SiN TriPleX integration interface with a novel alignment technique and its application to complex photonic integrated circuits. The integration interface comprises vertical alignment stops, which simplify the alignment process and allow for array integration with the same simplicity as for single dies. Horizontal alignment is carried out by utilizing optical backscatter reflectometry to get an active feedback signal without the need to operate the chip. Thus, typical contacting limitations of active flip-chip alignment are overcome. By using this method, we demonstrate the integration of InP DFB lasers with more than 60 mW of optical power coupled to a SiN waveguide with an averaged coupling loss of -2.1 dB. The hybrid integration process is demonstrated for single dies as well as full arrays. We evaluate the feasibility of the assembly process for complex photonic integrated circuits by integrating an InP gain chip to a SiN TriPleX external cavity. The process proves to be well suited and allows monitoring chip quality during assembly. A fully functional hybrid integrated tunable laser is fabricated, which is capable of full C-band tuning with optical output power of up to 60 mW.
InAs quantum dots (QDs) on InP were implemented as active layers in laser structures completely grown by metal organic vapor phase epitaxy (MOVPE). In laser structures due to growth of the upper InP cladding layers onto the QDs, a marked blueshift of the emission wavelength and a simultaneous degradation of photoluminescence intensity were observed. This behavior was systematically investigated using thermal treatment to simulate the growth of the upper cladding layer. Using an adequate growth procedure emission behavior was achieved that has proven to be fairly insensitive to over-/regrowth steps. Broad-area 1.55μm emitting laser devices were fabricated by incorporating seven QD layers in an all-MOVPE grown structure. Transparency current densities per dot layer of 80Acm−2 were achieved which is close to values of multiple quantum well lasers processed in the same way.
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