Effect of metal organic vapor phase epitaxy growth conditions on emission wavelength stability of 1.55μm quantum dot lasers

Abstract

InAs quantum dots (QDs) on InP were implemented as active layers in laser structures completely grown by metal organic vapor phase epitaxy (MOVPE). In laser structures due to growth of the upper InP cladding layers onto the QDs, a marked blueshift of the emission wavelength and a simultaneous degradation of photoluminescence intensity were observed. This behavior was systematically investigated using thermal treatment to simulate the growth of the upper cladding layer. Using an adequate growth procedure emission behavior was achieved that has proven to be fairly insensitive to over-/regrowth steps. Broad-area 1.55μm emitting laser devices were fabricated by incorporating seven QD layers in an all-MOVPE grown structure. Transparency current densities per dot layer of 80Acm−2 were achieved which is close to values of multiple quantum well lasers processed in the same way.

Dynamic properties of InAs∕InP (311)B quantum dot Fabry–Perot lasers emitting at 1.52μm

“…However, these quasi-1 D nanostructures exhibit a linewidth enhancement factor (LEF) which amounts to ~ 4-6 8,9 , similar to that of the best QW lasers. More recently, MBE growth 10 and metal-organic chemical vapour phase epitaxy (MOVPE) 11,12 have allowed the growth of truly three-dimensionally confined QDs on InP (100). No investigation of the LEF has ever been reported in this material system.…”

InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum-dash formation with InGaAsP decomposition

“…By tuning the growth conditions, such as arsine and phosphine pressure, indium flux, or growth temperature, either quantum dots or quantum dashes can be formed, leading to a wide range of lasers with excellent device performance. 10,11 However, the details of the formation of quantum dots or quantum dashes and the role of the matrix material are not understood up to now.…”

Hydrothermal Synthesis and Size-Enhanced Chromaticity of Sr2ZnSi2O7:Eu3+ Nanoparticles

“…1-3 Self organization effects present in the S-K growth mode is one of the most promising way to obtain highly efficient quantum dot layers. 4 The growth techniques mostly employed to make InAs/GaAs dot structures are MOVPE [5][6] and MBE. [7][8] Many groups have so far explored the possibilities of modifying the morphological and emission properties of these dot structures through optimization of growth parameters such as temperature, 9 InAs coverage, 10 deposition rate, 11 etc.…”