Neutron diffraction and Mössbauer spectroscopic measurements have been performed on four series of ternary alkali stannosilicate glasses of nominal composition (SnO0.5-x
(M2
O)x
(SiO2
)0.5
with 0
x
0.2, where the modifier cations were M = Li, Na, K and Rb. The data show that the tin is predominantly three co-ordinate and that the length of the Sn-O bond and the O-Sn-O angle decrease with increasing modifier concentration x
. This reduction increases with increasing size of the modifier cation, and is opposite in sign to the macroscopic molar volume which increases with modifier content. The 119
Sn Mössbauer spectra of these samples showed that most of the tin is in the Sn2+
state and that the isomer shift and quadrupole splitting vary approximately linearly with the Sn-O bond length and O-Sn-O bond angle for each series. This is consistent with a contraction of the 5p electron orbitals of the tin atoms and an increase in the symmetry of the ligand environment as modifier ions are added.
High-field Mössbauer spectroscopy was performed on a range of tin-containing ternary and binary silicate glass systems. All the glasses unambiguously exhibited a positive value for for the valence state. Determination of the sign of indicates that the electron distribution around each Sn nucleus is similar at all the tin atoms, which is a significant finding for glasses. These results suggest that the electronic state of the is dictated by its non-bonding electron orbital, which has strong character, and which provides the dominant contribution to the electric field gradient present at the nucleus.
Evaluation of back-side secondary ion mass spectrometry for boron diffusion in silicon and silicon-on-insulator substrates J. Appl. Phys. 96, 3692 (2004); 10.1063/1.1782959 Optical properties of N + ion-implanted and rapid thermally annealed Si ( 100 ) wafers studied by spectroscopic ellipsometry J. Appl. Phys. 96, 3247 (2004); 10.1063/1.1777807Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry eV-10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study
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