Secondary ion mass spectrometry analysis of implanted and rapid thermal processing annealed wafers for sub-100 nanometer technology

Ehrke, U.; Sears, A.; Lerch, W.; Paul, S.; Roters, G.; Downey, Daniel F.; Arevalo, E.

doi:10.1116/1.1633284

Cited by 7 publications

(1 citation statement)

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“…Precise depth calibration was carried out by using delta samples and concentration calibration by uniformly doped standards. 4 Under these conditions the dose repeatability is typically within 1% ͓1, relative standard dviation ͑RSD͔͒ and the repeatability of junction depth within ±1%. The chemical junction depth throughout this publication is defined as the depth where the total boron concentration falls below a level of 5 ϫ 10 18 cm −3 in the SIMS profile for the 65 nm technology node or 7 ϫ 10 18 cm −3 for the 45 nm node, respectively.…”

Section: Methodsmentioning

confidence: 94%

Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions

Lerch

Paul

Niess

et al. 2005

J. Electrochem. Soc.

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The solid phase epitaxial growth technique appears to be a promising method for achieving junction depths and sheet resistance values low enough to meet the performance specifications of the 65 and 45 nm node for boron, BF 2 , and BF 3 doping profiles in amorphous silicon. Room-temperature implants of these three dopant species into Si͑100͒ preamorphized by 74 Ge + ͑30 keV, 1.0 ϫ 10 15 cm −2 ͒ lead to boron concentration profiles that fulfill the technological requirements. It was found that even for ultrashallow junctions the time for the regrowth process at 650°C has to be optimized with regard to the implanted species in the range between 5 and 60 s, especially when fluorine is present. The thermal stability of the boron profile distribution that meets 65-nm-node requirements was evaluated by subsequent thermal anneals simulating the thermal effects expected for typical silicidation processes. For a more detailed investigation, the postannealing temperatures ranged from 250 to 1050°C with times from a few to several hundred seconds. All the junctions were analyzed by four-point probe and selected samples by secondary ion mass spectroscopy, transmission electron microscopy, and high-resolution electron microscopy.The combination of doping and activation technology is expected to provide solutions for highly activated, shallow, and abrupt dopant profiles required for advanced logic device technology beyond the 90-nm node. 1 In contrast to spike and/or flash annealing, a simple approach for the formation of ultrashallow junctions with boron consists of preamorphizing the substrate prior to dopant implantation followed by a low-temperature solid phase epitaxial growth process ͑SPEG͒. The SPEG technique currently appears to be a promising method for achieving junction depth and sheet resistance values low enough to meet the performance specifications for the 65-and 45-nm node. The optimal process for high activation during SPEG involves annealing at ϳ650°C for 5-60 s in an inert ambient. 2 The main advantages of the SPEG technique is that it has been extensively studied for at least three decades. In general it is rather simple and requires only conventional implant and rapid thermal processing equipment. It is also a low-temperature approach that is thermally compatible with advanced materials such as high-k dielectrics and metal gates. In this paper we present some of our recent results on the formation of ultrashallow junctions using the SPEG technique. Additionally, data for technology nodes beyond 90 nm are also presented in a sheet resistance vs junction depth matrix, including data from current literature of various techniques.However, the thermal stability of activated junctions is a critical consideration for front-end complementary metal oxide semiconductor ͑CMOS͒ manufacturing. Therefore, in the second part we present a detailed study of boron deactivation during thermal processes after SPEG. Postannealing temperatures were chosen in order to "simulate" typical self-aligned silicide processes for NiSi or...

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Section: Methodsmentioning

confidence: 94%

Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions

Lerch

Paul

Niess

et al. 2005

J. Electrochem. Soc.

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Current literature in mass spectrometry

2005

J. Mass Spectrom.

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In order to keep subscribers up‐to‐date with the latest developments in their field, John Wiley & Sons are providing a current awareness service in each issue of the journal. The bibliography contains newly published material in the field of mass spectrometry. Each bibliography is divided into 11 sections: 1 Books, Reviews & Symposia; 2 Instrumental Techniques & Methods; 3 Gas Phase Ion Chemistry; 4 Biology/Biochemistry: Amino Acids, Peptides & Proteins; Carbohydrates; Lipids; Nucleic Acids; 5 Pharmacology/Toxicology; 6 Natural Products; 7 Analysis of Organic Compounds; 8 Analysis of Inorganics/Organometallics; 9 Surface Analysis; 10 Environmental Analysis; 11 Elemental Analysis. Within each section, articles are listed in alphabetical order with respect to author (6 Weeks journals ‐ Search completed at 15th. Dec. 2004)

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