Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAs quantum well structure reveal a series of ultra-narrow peaks attributed to the quantum confined exciton states. The intensity of these peaks decreases as a function of temperature, while the linewidths demonstrate a complex and peculiar behavior. At low pumping the widths of all peaks remain quite narrow (< 0.1 meV) in the whole temperature range studied, 4 -30 K. At the stronger pumping, the linewidth first increases and than drops down with the temperature rise. Pump-probe experiments show two characteristic time scales in the exciton decay, < 10 ps and 15 -45 ns, respectively. We interpret all these data by an interplay between the exciton recombination within the light cone, the exciton relaxation from a nonradiative reservoir to the light cone, and the thermal dissociation of the nonradiative excitons. The broadening of the low energy exciton lines is governed by the radiative recombination and scattering with reservoir excitons while for the higher energy states the linewidths are also dependent on the acoustic phonon relaxation processes.
Resonance dielectric response of excitons is studied for the high-quality
GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To
highlight effects of the QW asymmetry, we have grown and studied several
heterostructures with nominally square QWs as well as with triangle-like QWs.
Several quantum confined exciton states are experimentally observed as narrow
exciton resonances with various profiles. A standard approach for the
phenomenological analysis of the profiles is generalized by introducing of
different phase shifts for the light waves reflected from the QWs at different
exciton resonances. Perfect agreement of the phenomenological fit to the
experimentally observed exciton spectra for high-quality structures allowed us
to obtain reliable parameters of the exciton resonances including the exciton
transition energies, the radiative broadenings, and the phase shifts. A direct
numerical solution of Schr\"{o}dinger equation for the heavy-hole excitons in
asymmetric QWs is used for microscopic modeling of the exciton resonances.
Remarkable agreement with the experiment is achieved when the effect of indium
segregation during the heterostructure growth is taken into account. The
segregation results in a modification of the potential profile, in particular,
in an asymmetry of the nominally square QWs
The spin dynamics of localized donor-bound electrons interacting with the nuclear spin ensemble in n-doped GaAs epilayers is studied using nuclear spin polarization by light with modulated circular polarization. We show that the observed build-up of the nuclear spin polarization is a result of competition between nuclear spin cooling and nuclear spin warm-up in the oscillating Knight field. The developed model allows us to explain the dependence of nuclear spin polarization on the modulation frequency and to estimate the equilibration time of the nuclear spin system that appears to be shorter than the transverse relaxation time T 2 determined from nuclear magnetic resonance.
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