Abstract:Resonance dielectric response of excitons is studied for the high-quality
GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To
highlight effects of the QW asymmetry, we have grown and studied several
heterostructures with nominally square QWs as well as with triangle-like QWs.
Several quantum confined exciton states are experimentally observed as narrow
exciton resonances with various profiles. A standard approach for the
phenomenological analysis of the profiles is generalized by introduc… Show more
“…In contemporary optical experiments with wide QWs in high-quality heterostructures, one can observe many quantum-confined exciton states. The states are typically observed as resonant features (oscillations) in the reflectance spectra of the heterostructures [40][41][42][43][44][45][46][47][48][49][50][51]. This allows one to study the effects of the external fields on the propagating excitons.…”
Linear-in-wave-vector K terms of an electron Hamiltonian play an important role in topological insulators and spintronic devices. Here we demonstrate how an external electric field can control the magnitude of a linear-inK term in the exciton Hamiltonian. The effect of the electric field on interference of exciton polaritons in a high-quality structure with a wide GaAs quantum well was experimentally studied by means of the differential reflection spectroscopy. It is found that the interference pattern is strongly suppressed at certain electric field and then it is reinstalled, but with an inverted phase, at the further increase of the field. This behavior of the pattern is successfully explained by the electric-field-induced linear-inK terms in the Hamiltonian of the exciton propagating across the quantum well. An excellent agreement between the experimental data and the results of calculations using semiclassical nonlocal dielectric response model confirms the validity of the method and paves the way for the realization of excitonic Datta-Das transistors. In full analogy with the spin-orbit transistor proposed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)], the switch between positive and negative interference of exciton polaritons propagating forward and backward in a GaAs film is achieved by application of an electric field having a nonzero component in the plane of the quantum well layer.
“…In contemporary optical experiments with wide QWs in high-quality heterostructures, one can observe many quantum-confined exciton states. The states are typically observed as resonant features (oscillations) in the reflectance spectra of the heterostructures [40][41][42][43][44][45][46][47][48][49][50][51]. This allows one to study the effects of the external fields on the propagating excitons.…”
Linear-in-wave-vector K terms of an electron Hamiltonian play an important role in topological insulators and spintronic devices. Here we demonstrate how an external electric field can control the magnitude of a linear-inK term in the exciton Hamiltonian. The effect of the electric field on interference of exciton polaritons in a high-quality structure with a wide GaAs quantum well was experimentally studied by means of the differential reflection spectroscopy. It is found that the interference pattern is strongly suppressed at certain electric field and then it is reinstalled, but with an inverted phase, at the further increase of the field. This behavior of the pattern is successfully explained by the electric-field-induced linear-inK terms in the Hamiltonian of the exciton propagating across the quantum well. An excellent agreement between the experimental data and the results of calculations using semiclassical nonlocal dielectric response model confirms the validity of the method and paves the way for the realization of excitonic Datta-Das transistors. In full analogy with the spin-orbit transistor proposed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)], the switch between positive and negative interference of exciton polaritons propagating forward and backward in a GaAs film is achieved by application of an electric field having a nonzero component in the plane of the quantum well layer.
“…The layer thickness in all the samples has a gradient, therefore the actual width of the wide QWs (wider than 30 nm) was determined from the microscopic modeling of the exciton spectra (see details in Ref. [36]). For the points on the samples where the magnetic measurements were made, the fitted values of width are 87, 33, 40, and 45 nm for the 95-, 30-, 36-, and 41-nm QWs, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…The strain induces a hh-lh splitting that results in a decrease of the hh-lh coupling compared to the unstrained material. Second, a segregation of indium atoms during the growth process changes the average width of the QW and breaks the presumed rectangular profile of the QW potential [36,44]. We account for this effect choosing an appropriate QW width to get good correspondence of the calculated exciton energy spectrum with that obtained experimentally.…”
Zeeman splitting of the quantum confined states of excitons in the InGaAs quantum wells (QWs) is experimentally found to strongly depend on the quantization energy. Moreover, it changes its sign when the quantization energy increases with the decrease of the QW width. In the 87-nm QW, the sign change is observed for the excited quantum confined states, which are above the ground state only by a few meV. A two-step approach for the numerical solution of two-particle Schrödinger equation with taking into account for the Coulomb interaction and the valence-band coupling is used for theoretical justification of the observed phenomenon. The calculated variation of the g-factor convincingly follows the dependencies obtained in the experiments.
“…1. Наблюдаемые экситонные резонансы хорошо описываются в рамках стандартной модели отражения [3][4][5][6]. Это позволяет с высокой точностью определять спектральное положение и уширение экситонных резонансов.…”
Mechanisms of the suppression of the electron-hole exchange interaction in nonradiative excitons with a large in-plane wave vector in high-quality heterostructures with quantum wells are analyzed theoretically. It is shown that the dominant suppression mechanism is exciton-exciton scattering accompanied by the mutual spin flips of like carriers (either two electrons or two holes), comprising the excitons. As a result, the electron spin polarization in nonradiative excitons may be retained for a long time. The analysis of experimental data shows that this relaxation time can exceed one nanosecond. This long-term and optically controllable spin memory in an exciton reservoir may be of interest for future information technologies.
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