Exciton localization in near-surface regions of semiconductors is discussed. Various mechanisms are listed responsible for the effect based on the binding of the excitons by near-surface imperfections in crystals. One of the most important mechanisms of the localization is the Stark-effect on excitons in space-large layers of semiconductors. It is accounted for in the numerical computation of the exciton reflectance. Essential is a nonuniform character of the electric field. The localization is accompanied by a large enhancement of the exciton reflectance and the appearance of a lowenergy spike in the reflection lineshape. The computed lineshapes are typical of the A n = 1 exciton in a number of CdS and CdSe samples. It is shown that the increase of the bulk damping R m e J I O K~J I H~~U H H M npeo6pa3ye~ ~o a r o p e~r u y w c~ nonocy oTpameHm K nneanbaofi @opnie. Hocnenmn xapamepHa HJIR ~C H T O H~ B B Tex me KpHcTannax. T a m M 0 6 p a 3 0~, Hame mcnenosaHae paapemae~ napaHoIcc, ~~E E J I H ) Y~H ) J U H~~C F I B paaaoii qyBcTBmemHocTH 3KCHTOHOB A II B K pa3JIHYHbIM (Hepa3pyLUaloUMM) 0 6 p a 6 0~K a~ IlOBepXHOCTM. TaKme 06-bRCHReTCR aHOMaJIbHOe IlOBeAeHMe MMHHMaJIbHOI' O 3HaYeHMR K03@@IIUMeHTa OTpa-XeHMR C TeMIlepaTypOa B CdS, 0 KOTOPOM HeXaBHO 6bmo c o o 6~u e~o B JlIITepaType.
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