1986
DOI: 10.1002/pssb.2221350218
|View full text |Cite
|
Sign up to set email alerts
|

Localization of excitons in space‐charge layers

Abstract: Exciton localization in near-surface regions of semiconductors is discussed. Various mechanisms are listed responsible for the effect based on the binding of the excitons by near-surface imperfections in crystals. One of the most important mechanisms of the localization is the Stark-effect on excitons in space-large layers of semiconductors. It is accounted for in the numerical computation of the exciton reflectance. Essential is a nonuniform character of the electric field. The localization is accompanied by … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
4
0
1

Year Published

1986
1986
2022
2022

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 11 publications
(5 citation statements)
references
References 9 publications
(2 reference statements)
0
4
0
1
Order By: Relevance
“…We assume that the 650 nm band has a complex structure, including contributions from the exciton and the acceptor center. As was shown in the paper [19], the exciton can be localized in the space charge layer. This corresponds to the discrete levels formation in the potential well.…”
Section: Photoluminescence Spectramentioning
confidence: 64%
“…We assume that the 650 nm band has a complex structure, including contributions from the exciton and the acceptor center. As was shown in the paper [19], the exciton can be localized in the space charge layer. This corresponds to the discrete levels formation in the potential well.…”
Section: Photoluminescence Spectramentioning
confidence: 64%
“…Мы предполагаем, что полоса 650 нм имеет сложную структуру, включающую вклады экситона и акцепторного центра. Как было показано в работе [19], экситон может локализоваться в слое объемного заряда. Этому соответствует образование в потенциальной яме дискретных уровней.…”
Section: результаты и обсуждениеunclassified
“…Here M t = M I N s is the total transfer matrix of a superlattice period d = d s + d I and M I is the 2 × 2 matrix of the insulator M I = cos(q I d I ) −iY I sin(q I d I ) −iZ I sin(q I d I ) cos(q I d I ) (17) where Z I = q I /ω and Y I = 1/Z I . For a superlattice with period d, we invoke Bloch's theorem to write…”
Section: Theorymentioning
confidence: 99%
“…Recent publications have been devoted to studying optical properties of surfaces and films of semiconductors taking into account surface potentials with an attractive as well as a repulsive part [1][2][3][4][5][6]. The potential well formed in this way produces bound states of excitons which manifest themselves as broad peaks in the reflectivity spectra [17,18]. Experimental observations on the effects of bound states on the optical response of semiconductor surfaces have been reported [17,[19][20][21].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation