A model for the proton stopping cross section in solids is suggested, which treats stopping in collisions with electrons of different electronic structure subsystems as independent processes. A number of effects due to the influence of the electronic structure on energy losses of protons moving randomly are described. Good agreement between theoretical results and experimental data is obtained. A "fine structure" for the maximum of the stopping cross section energy dependence is predicted. The reasons for the difference in stopping cross sections between protons moving randomly in diamond and graphite are discussed. rIpeAJIOXeHa MOnWIb CeqeHHR TOpMOmeHEIfI IIPOTOHOB B TBepAOM Tene, B KOTOPOfi np0-UeCCbI TOpMOXeHEIH HOHOB Ha 3JIeKTpOHaX pa3JIEIqHbIX IIOACHCTeM 3JleKTPOHHOfi CTPYK-TypM TBepAOrO TeJIa PaCCMaTpHBaIOTCR He3aBRCEIMO. OllHCaH PIIA 3@@HTOB , 06J'CnOB-neHmIx BnmmeM ~J I~K T P O H H O # c~p y~~y p b~ mepnoro Tena Ha a~e p r e~~r e c~~l e noTepu IIPOTOHOB, ABE~XYIQHXCII B HeopHemHposaHHoM HanpasneHm. HonyseHo xopomee COrJIaCEIe C 3KCIIePHMeHTOM. npeACKa3aHO HaJIEIqHe ,,TOHKOfi CTPY€CTyPbI" MaHCMMyMa 3HepreTElWCKOfi BBBEICHMOCTU Ce9eHMR TOpMOXeHHJT. 0 6 c y r n~a 1 0~c~ IIpHqHHbI OTJIMrIEIII Ce'leHElfi TOPMOXeHEIII IIPOTOHOB, HsHWynIHXCR B HeOpEIeHTEIpOBaHHOM HallpaBneHHH B a n~a a e EI rpa@me.
A mechanism of defect production and annealing due to irradiation with high-energy ions is proposed. I t is shown that the degree of damage on the subsurface region of a crystal is determined by competition of two processes: migration of defects from the depth to the crystal surface and their recombination due to an increase in the mobility of defect-forming atoms and vacancies.Ein Mechanismus zur Defekterzeugung und -ausheilung nach Bestrahlung mit hochenergetischen Ionen wird vorgeschlagen. Es wird gezeigt, daB der Schadigungsgrad des Oberflachenbereiches eines Kristalls durch die Konkurrenz zweier Prozesse bestimmt ist: die Wanderung von Defekten aus der Tiefe zur Kristalloberflache und ihre Rekombination infolge eines Anwachsens der Beweglichkeit der defektbildenden Atome und Leerstellen.
An approach to the derivation of kinetic equations describing the motion of accelerated particles in solids is suggested based on the microscopic phase density method. It is shown that the unified approach suggested makes possible to obtain all the known kinetic equations used for describing the interaction of accelerated particles with condensed medium as well as more exact expressions for the coefficients of these equations. A new type of the kinetic equation is obtained describing, in particular, ion channeling in complex single crystals.Ha ocHoBe MeToga MmpocKonmecKofi aa30~oB IIJIOTHOCTH npennomeH n o m o~ K sepea TsepAoe Teno. I I o~a a a~o , YTO Ha ocHoBe npennolrceHHoro nonxona c emmbix
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