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Effects of surface micromesas on reverse leakage current in InGaN/GaN Schottky barriers J. Appl. Phys. 112, 044505 (2012) The influence of the Franz-Keldysh effect on the electron diffusion length in p-type GaN determined using the spectral photocurrent technique J. Appl. Phys. 112, 044501 (2012) Electron beam induced current in InSb-InAs nanowire type-III heterostructuresWe analyze the forward characteristics of a-Si:H nip and pin diodes. At low bias, a well-defined exponential region exists, described by a noninteger quality factor n between 1.2 and 1.7. With increasing temperature, the quality factor decreases. This behavior can be understood with a model based on electron and hole recombination in the i layer, which relates the temperature dependence of the quality factor to the distribution of localized states in the amorphous silicon.The predictions of the model are supported by numerical calculations in which the diode device equations are solved for a given distribution of localized states. The different ideality factors are due to different energy dependencies of the density of deep states in the i layer.

Lead oxide (PbO) is a candidate direct conversion material for medical X-ray applications. We produced various samples and detectors with thick PbO layers. X-ray performance data such as dark current, charge generation yield and temporal behavior were evaluated on small samples. The influence of the metal contacts was studied in detail. We also covered large a-Si thin-film transistor (TFT)-plates with PbO. Imaging results from a large detector with an active area of 18 cm 20 cm are presented. The detector has 960 1080 pixels with a pixel pitch of 184 m. The modulation transfer function at the Nyquist frequency of 2.72 linepairs/mm is 50%. Finally, a full size X-ray image is presented.

Lead oxide (PbO) is a candidate direct conversion material for medical X-ray applications. We produced various samples and detectors with thick PbO layers. X-ray performance data such as dark current, charge generation yield and temporal behavior were evaluated on small samples. The influence of the metal contacts was studied in detail. We also covered large a-Si thin-film transistor (TFT)-plates with PbO. Imaging results from a large detector with an active area of 18 cm × 20 cm are presented. The detector has 960 × 1080 pixels with a pixel pitch of 184 ?m. The modulation transfer function at the Nyquist frequency of 2.72 linepairs/mm is 50%. Finally, a full size X-ray image is presented

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