High brightness electron sources for linac based free-electron lasers (FELs) are being developed at the Photo Injector Test facility at DESY, Zeuthen site (PITZ). Production of electron bunches with extremely small transverse emittance is the focus of the PITZ scientific program. The photoinjector optimization in 2008-2009 for a bunch charge of 1, 0.5, 0.25, and 0.1 nC resulted in measured emittance values which are beyond the requirements of the European XFEL [S. Rimjaem et al., Nucl. Instrum. Methods Phys. Res., Sect. A 671, 62 (2012)]. Several essential modifications were commissioned in 2010-2011 at PITZ, resulting in further improvement of the photoinjector performance. Significant improvement of the rf gun phase stability is a major contribution in the reduction of the measured transverse emittance. The old TESLA prototype booster was replaced by a new cut disk structure cavity. This allows acceleration of the electron beam to higher energies and supports much higher flexibility for stable booster operation as well as for longer rf pulses which is of vital importance especially for the emittance optimization of low charge bunches. The transverse phase space of the electron beam was optimized at PITZ for bunch charges in the range between 0.02 and 2 nC, where the quality of the beam measurements was preserved by utilizing long pulse train operation. The experimental optimization yielded worldwide unprecedented low normalized emittance beams in the whole charge range studied.

The photoinjector test facility at DESY, Zeuthen site (PITZ), was built to develop and optimize photoelectron sources for superconducting linacs for high-brilliance, short-wavelength free-electron laser (FEL) applications like the free-electron laser in Hamburg (FLASH) and the European x-ray free-electron laser (XFEL). In this paper, the detailed characterization of two laser-driven rf guns with different operating conditions is described. One experimental optimization of the beam parameters was performed at an accelerating gradient of about 43 MV=m at the photocathode and the other at about 60 MV=m. In both cases, electron beams with very high phase-space density have been demonstrated at a bunch charge of 1 nC and are compared with corresponding simulations. The rf gun optimized for the lower gradient has surpassed all the FLASH requirements on beam quality and rf parameters (gradient, rf pulse length, repetition rate) and serves as a spare gun for this facility. The rf gun studied with increased accelerating gradient at the cathode produced beams with even higher brightness, yielding the first demonstration of the beam quality required for driving the European XFEL: The geometric mean of the normalized projected rms emittance in the two transverse directions was measured to be 1:26 ` 0:13 mm mrad for a 1-nC electron bunch. When a 10% charge cut is applied excluding electrons from those phase-space regions where the measured phase-space density is below a certain level and which are not expected to contribute to the lasing process, the normalized projected rms emittance is about 0.9 mm mrad

a b s t r a c tHigh brightness electron sources for linac based short-wavelength free-electron lasers are developed and optimized for small transverse projected emittance at the photo-injector test facility at DESY, location Zeuthen (PITZ). A major part of the measurement program at PITZ is dedicated to transverse phase space optimization in order to fulfill the requirements of the European X-ray free-electron laser (European XFEL). A laser-driven RF-gun, treated with a dry-ice sublimation-impulse cleaning technique, a new photocathode laser system allowing short rise and fall times of the flat-top temporal distribution as well as several new diagnostic components have been installed at PITZ in 2008. The electrons generated via the photo-effect at a cesium telluride (Cs 2 Te) cathode are accelerated by a 1.6 cell L-band RF-gun cavity with a maximum accelerating gradient at the cathode of about 60 MV/m. The transverse projected emittance is measured using a single slit scan technique. In the 2008-2009 run period, a detailed characterization of the projected transverse emittance was performed at different operating conditions. Optimizations and measurement results as well as simulation predictions of the transverse projected emittance for bunch charges of 1, 0.5, 0.25 and 0.1 nC are presented and discussed in this paper. The geometric mean of the normalized projected rms emittance in both transverse directions for an electron bunch charge of 1 nC was measured to be 0.8970.01 mm mrad for a 100% rms phase-space distribution.

Thin film heterostructures composed of superconducting electrodes (molybdenum rhenium alloy) and a nanoscale silicon layer doped with tungsten, have been designed and experimentally studied. The current-voltage characteristics of junctions exhibiting local maxima of the current against the background of abrupt current increases for the first time, were measured in the voltage range of −800 to 800 mV, at temperatures of 4.2–8 K. The positions of these singularities, which are symmetrical with respect to zero voltage, varied from sample to sample within the range of 40–300 mV. With increasing temperature, they became blurred and completely vanished with the disappearance of superconductivity in the electrodes. The nature of the observed singularities is associated with the properties of electron tunneling through the impurity states localized in the semiconducting barrier. The use of a superconducting electrode enhances the interaction of the localized electron with the conduction electrons thanks to the root divergence in the density of electron states of a superconductor.

Following the ever-rising demand for new functionalities and novel materials in superconducting circuitry, we provide a complete view on the self-shunting problem in Josephson junctions relating it to specific features of a multichannel weak link between electrodes where averaging over the channels yields a bimodal distribution of transparencies with maxima near unity and zero. We provide two examples of such internally-shunted devices, four-layered Nb/Al-Al oxide-Nb junctions with strongly disordered nm-thick insulating layers where stochastic distribution of transparencies takes place on a local rather than a global scale and MoRe/W-doped Si-Si-MoRe devices with strongly inhomogeneous silicon interlayers partly doped by metallic nanoclusters where the main charge transport occurs across resonance-percolating trajectories. We show how the predicted universal distribution function of transmission coefficients can be verified experimentally without any fitting parameters and analyze some old and new experimental data from this perspective. We believe that our results can form a base for novel four-layered Josephson junctions with enhanced superconducting properties and, at the same time, well-separated metallic electrodes.

The effect of doping with Ti, Ta, SiC in complex with synthesis temperature on the amount and distribution of structural inhomogeneities in MgB 2 matrix of high-pressuresynthesized-materials (2 GPa) which can influence pining: higher borides (MgB 12 ) and oxygen-enriched Mg-B-O inclusions, was established and a mechanism of doping effect on j c

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The behaviour of t h e crystal structure of the YBCO epitaxial films with enlarged c-axis parameter has been studied. The c-axis expansion effect is shown to be induced by low oxygen partial pressure during the film deposition. This effect cannot be explained only by oxTgen deficit in the C u 4 chains or (Y. Ea) cation disorder. A bridging oxygen disorder model shows qualitative agreement with experimental x-ray diffraction spectra. Thermodynamic analysis of the formation of oxygen vacancies shows the high theoretical density of the bridging oxygen vacancies at the film synthesis temperatures.