We demonstrate the use of a p-doped amorphous starburst amine, 4, 4′, 4″-tris(N, N-diphenyl- amino)triphenylamine (TDATA), doped with a very strong acceptor, tetrafluoro- tetracyano-quinodimethane by controlled coevaporation as an excellent hole injection material for organic light-emitting diodes (OLEDs). Multilayered OLEDs consisting of double hole transport layers of p-doped TDATA and triphenyl-diamine, and an emitting layer of pure 8-tris-hydroxyquinoline aluminum exhibit a very low operating voltage (3.4 V) for obtaining 100 cd/m2 even for a comparatively large (110 nm) total hole transport layer thickness.
We present a study of controlled n-type doping in molecular organic semiconductors: Naphthalenetetracarboxylic dianhydride is doped by cosublimation with the donor molecule bis(ethylenedithio)-tetrathiafulvalene. Electrical parameters are deduced from temperaturedependent measurements of the conductivity and the thermopower for various dopant concentrations. The results are compared to the predictions of a standard model commonly used for crystalline semiconductors. The Fermi level shifts towards the transport level, the conductivity is increased, and the mobility decreases with the doping ratio.
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