Sputter-deposited thin films of TiZrV are fully activated after 24 h "in situ" heating at 180 °C. This activation temperature is the lowest of some 18 different getter coatings studied so far, and it allows the use of the getter thin film technology with aluminium alloy vacuum chambers, which cannot be baked at temperatures higher than 200 °C.An updated review is given of the most recent results obtained on TiZrV coatings, covering the following topics: influence of the elemental composition and crystal structure on activation temperature, discharge gas trapping and degassing, dependence of pumping speed and surface saturation capacity on film morphology, ageing consequent to activation-air venting cycles and ultimate pressures. Furthermore, the results obtained when exposing a coated particle beam chamber to synchrotron radiation in a real accelerator environment (ESRF Grenoble) are presented and discussed.

Nonevaporable thin film getters based on the elements of the fourth and fifth columns of the periodic table were deposited by sputtering. Among the some 20 alloys studied to date, the lowest activation temperature (about 180 °C for a 24 h heating) was found in the Ti–Zr–V system with a well-defined composition range. Characterization of the activation behavior of such Ti–Zr–V films is presented. The evolution of the surface chemical composition during activation is monitored by Auger electron spectroscopy and the functional properties are evaluated by pumping speed measurements. The pumping speed characteristics are quite similar to those already measured for commercially available nonevaporable getter materials, except for the much lower saturation coverage for CO. This inconvenience, which is due to the smooth surface structure of these films, can be counteracted by increasing the roughness of the substrate.