No abstract

No abstract

In this work, we report on the growth of GaN films on Porous Silicon (PS) substrates by the Metalorganic Vapour Phase Epitaxy (MOVPE) technique. The growth of GaN has been controlled by in-situ laser reflectometry. The growth rate was found to depend on growth temperature. X-ray Diffraction (XRD) patterns show that the epitaxial films correspond to that of GaN. The morphology and density of the nano-scale GaN layers were determined by atomic force microscopy (AFM) measurements. These first results show that PS is a promising candidate for obtaining GaN films.

No abstract